화학공학소재연구정보센터
검색결과 : 12건
No. Article
1 Conductive polymer nanoantennas for dynamic organic plasmonics
Chen SZ, Kang ESH, Chaharsoughi MS, Stanishev V, K?hne P, Sun HD, Wang CF, Fahlman M, Fabiano S, Darakchieva V, Jonsson MP
Nature Nanotechnology, 15(1), 35, 2020
2 Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies
Armakavicius N, Bouhafs C, Stanishev V, Kuhne P, Yakimova R, Knight S, Hofmann T, Schubert M, Darakchieva V
Applied Surface Science, 421, 357, 2017
3 Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by infrared spectroscopic ellipsometry
Schooche S, Hofmann T, Darakchieva V, Wang X, Yoshikawa A, Wang K, Araki T, Nanishi Y, Schubert M
Thin Solid Films, 571, 384, 2014
4 Structure and properties of phosphorus-carbide thin solid films
Furlan A, Gueorguiev GK, Czigany Z, Darakchieva V, Braun S, Correia MR, Hogberg H, Hultman L
Thin Solid Films, 548, 247, 2013
5 Optical properties of GaAs0.9-xNxSb0.1 alloy films studied by spectroscopic ellipsometry
Ben Sedrine N, Bouhafs C, Schubert M, Harmand JC, Chtourou R, Darakchieva V
Thin Solid Films, 519(9), 2838, 2011
6 Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxy
Darakchieva V, Monemar B, Usui A, Saenger M, Schubert M
Journal of Crystal Growth, 310(5), 959, 2008
7 Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)
Pedersen H, Leone S, Henry A, Beyer FC, Darakchieva V, Janzen E
Journal of Crystal Growth, 307(2), 334, 2007
8 Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
Paskova T, Darakchieva V, Paskov P, Birch J, Valcheva E, Persson POA, Arnaudov B, Tungasmitta S, Monemar B
Journal of Crystal Growth, 281(1), 55, 2005
9 Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy
Paskova T, Paskov PP, Goldys EM, Valcheva E, Darakchieva V, Sodervall U, Godlewski M, Zielinski M, Hautakangas S, Saarinen K, Carlstrom CF, Wahab Q, Monemar B
Journal of Crystal Growth, 273(1-2), 118, 2004
10 In-plane epitaxial relationships between a-plane sapphire substrates and GaN layers grown by different techniques
Paskova T, Darakchieva V, Valcheva E, Paskov PP, Monemar B, Heuken M
Journal of Crystal Growth, 257(1-2), 1, 2003