검색결과 : 55건
No. | Article |
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1 |
Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates Liu F, Huang L, Kamaladasa R, Picard YN, Preble EA, Paskova T, Evans KR, Davis RF, Porter LM Journal of Crystal Growth, 387, 16, 2014 |
2 |
Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates Huang L, Liu F, Zhu JX, Kamaladasa R, Preble EA, Paskova T, Evans K, Porter L, Picard YN, Davis RF Journal of Crystal Growth, 347(1), 88, 2012 |
3 |
Optical property of silicon quantum dots embedded in silicon nitride by thermal annealing Kim BH, Davis RF, Park SJ Thin Solid Films, 518(6), 1744, 2010 |
4 |
On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(11(2)over-bar0) Bishop SM, Reynolds CL, Molstad JC, Stevie FA, Barnhardt DE, Davis RF Applied Surface Science, 255(13-14), 6535, 2009 |
5 |
Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 (2)over-bar 0) Bishop SM, Reynolds CL, Liliental-Weber Z, Uprety Y, Ebert CW, Stevie FA, Park JS, Davis RF Journal of Crystal Growth, 311(1), 72, 2008 |
6 |
Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0) Bishop SM, Park JS, Gu J, Wagner BP, Reltmeier ZJ, Batchelor DA, Zakharov DN, Liliental-Weber Z, Davis RF Journal of Crystal Growth, 300(1), 83, 2007 |
7 |
Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates Wagner BP, Reitmeier ZJ, Park JS, Bachelor D, Zakharov DN, Liliental-Weber Z, Davis RF Journal of Crystal Growth, 290(2), 504, 2006 |
8 |
Effect of thermal annealing on the metastable optical properties of GaN thin films Chang YC, Kolbas RM, Reitmeier ZJ, Davis RF Journal of Vacuum Science & Technology A, 24(4), 1051, 2006 |
9 |
Growth and structural investigations of epitaxial hexagonal YMnO3 thin films deposited on wurtzite GaN(001) substrates Balasubramanian KR, Chang KC, Mohammad FA, Porter LM, Salvador PA, DiMaio J, Davis RF Thin Solid Films, 515(4), 1807, 2006 |
10 |
Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0001) surface and the initial growth of GaN and AlN Hartman JD, Naniwae K, Petrich C, Nemanich R, Davis RF Applied Surface Science, 242(3-4), 428, 2005 |