화학공학소재연구정보센터
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No. Article
1 Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates
Liu F, Huang L, Kamaladasa R, Picard YN, Preble EA, Paskova T, Evans KR, Davis RF, Porter LM
Journal of Crystal Growth, 387, 16, 2014
2 Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates
Huang L, Liu F, Zhu JX, Kamaladasa R, Preble EA, Paskova T, Evans K, Porter L, Picard YN, Davis RF
Journal of Crystal Growth, 347(1), 88, 2012
3 Optical property of silicon quantum dots embedded in silicon nitride by thermal annealing
Kim BH, Davis RF, Park SJ
Thin Solid Films, 518(6), 1744, 2010
4 On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(11(2)over-bar0)
Bishop SM, Reynolds CL, Molstad JC, Stevie FA, Barnhardt DE, Davis RF
Applied Surface Science, 255(13-14), 6535, 2009
5 Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 (2)over-bar 0)
Bishop SM, Reynolds CL, Liliental-Weber Z, Uprety Y, Ebert CW, Stevie FA, Park JS, Davis RF
Journal of Crystal Growth, 311(1), 72, 2008
6 Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0)
Bishop SM, Park JS, Gu J, Wagner BP, Reltmeier ZJ, Batchelor DA, Zakharov DN, Liliental-Weber Z, Davis RF
Journal of Crystal Growth, 300(1), 83, 2007
7 Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates
Wagner BP, Reitmeier ZJ, Park JS, Bachelor D, Zakharov DN, Liliental-Weber Z, Davis RF
Journal of Crystal Growth, 290(2), 504, 2006
8 Effect of thermal annealing on the metastable optical properties of GaN thin films
Chang YC, Kolbas RM, Reitmeier ZJ, Davis RF
Journal of Vacuum Science & Technology A, 24(4), 1051, 2006
9 Growth and structural investigations of epitaxial hexagonal YMnO3 thin films deposited on wurtzite GaN(001) substrates
Balasubramanian KR, Chang KC, Mohammad FA, Porter LM, Salvador PA, DiMaio J, Davis RF
Thin Solid Films, 515(4), 1807, 2006
10 Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0001) surface and the initial growth of GaN and AlN
Hartman JD, Naniwae K, Petrich C, Nemanich R, Davis RF
Applied Surface Science, 242(3-4), 428, 2005