검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
A fast and reliable method used to investigate the size-dependent retention lifetime of a phase-change line cell Goux L, Hurkx GAM, Wang XP, Delhougne R, Attenborough K, Gravesteijn D, Wouters D, Gonzalez JP Solid-State Electronics, 58(1), 17, 2011 |
| 2 |
Quantitative prediction of junction leakage in bulk-technology CMOS devices Duffy R, Heringa A, Venezia VC, Loo J, Verheijen MA, Hopstaken MJP, van der Tak K, de Potter M, Hooker JC, Meunier-Beillard P, Delhougne R Solid-State Electronics, 54(3), 243, 2010 |
| 3 |
Analysis of the leakage current origin in thin strain relaxed buffer substrates Eneman G, Simoen E, Delhougne R, Verheyen P, Simons V, Loo R, Caymax M, Claeys C, Vandervorst W, De Meyer K Journal of the Electrochemical Society, 153(5), G379, 2006 |
| 4 |
Progress in the physical modeling of carrier illumination Dortu F, Clarysse T, Loo R, Pawlak B, Delhougne R, Vandervorst W Journal of Vacuum Science & Technology B, 24(3), 1131, 2006 |
| 5 |
Non-selective thin SiGe strain-relaxed buffer layers: Growth and carbon-induced relaxation Caymax M, Delhougne R, Ries M, Luysberg M, Loo R Thin Solid Films, 508(1-2), 260, 2006 |
| 6 |
Development of a new type of SiGe thin strain relaxed buffer based on the incorporation of a carbon-containing layer Delhougne R, Meunier-Beillard P, Caymax M, Loo R, Vandervorst W Applied Surface Science, 224(1-4), 91, 2004 |
| 7 |
Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growth Loo R, Collaert N, Verheyen P, Caymax M, Delhougne R, De Meyer K Applied Surface Science, 224(1-4), 292, 2004 |
| 8 |
Selective epitaxial deposition of strained silicon: a simple and effective method for fabricating high performance MOSFET devices Delhougne R, Eneman G, Caymax M, Loo R, Meunier-Beillard P, Verheyen P, Vandervorst W, De Meyer K, Heyns M Solid-State Electronics, 48(8), 1307, 2004 |