검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
FDSOI devices with thin BOX and ground plane integration for 32 nm node and below Fenouillet-Beranger C, Denorme S, Perreau P, Buj C, Faynot O, Andrieu F, Tosti L, Barnola S, Salvetat T, Garros X, Casse M, Allain F, Loubet N, Pham-Nguyen L, Deloffre E, Gros-Jean M, Beneyton R, Laviron C, Marin M, Leyris C, Haendler S, Leverd F, Gouraud P, Scheiblin P, Clement L, Pantel R, Deleonibus S, Skotnicki T Solid-State Electronics, 53(7), 730, 2009 |
| 2 |
Folded fully depleted FET using Silicon-On-Nothing technology as a highly W-scaled planar solution Bidal G, Loubet N, Fenouillet-Beranger C, Denorme S, Perreau P, Fleury D, Clement L, Laviron C, Leverd F, Gouraud P, Barnola S, Beneyton R, Torres A, Duluard C, Chapon JD, Orlando B, Salvetat T, Grosjean M, Deloffre E, Pantel R, Dutartre D, Monfray S, Ghibaudo G, Boeuf F, Skotnicki T Solid-State Electronics, 53(7), 735, 2009 |