화학공학소재연구정보센터
검색결과 : 14건
No. Article
1 Crystallinity of Electrically Scaled Atomic Layer Deposited HfO2 from a Cyclical Deposition and Annealing Scheme
Consiglio S, Clark RD, Bersch E, LaRose JD, Wells I, Tapily K, Leusink GJ, Diebold AC
Journal of the Electrochemical Society, 159(6), G80, 2012
2 Spectroscopic ellipsometry characterization of high-k gate stacks with V-t shift layers
Di M, Bersch E, Clark R, Consiglio S, Leusink G, Diebold AC
Thin Solid Films, 519(9), 2889, 2011
3 Extension of Far UV spectroscopic ellipsometry studies of High-kappa dielectric films to 130 nm
Kamineni VK, Hilfiker JN, Freeouf JL, Consiglio S, Clark R, Leusink GJ, Diebold AC
Thin Solid Films, 519(9), 2894, 2011
4 Investigation of optical properties of benzocyclobutene wafer bonding layer used for 3D interconnects via infrared spectroscopic ellipsometry
Kamineni VK, Singh P, Kong LW, Hudnall J, Qureshi J, Taylor C, Rudack A, Arkalgud S, Diebold AC
Thin Solid Films, 519(9), 2924, 2011
5 Dielectric properties and thickness metrology of strain engineered GaN/AlN/Si (111) thin films grown by MOCVD
Tungare M, Kamineni VK, Shahedipour-Sandvik F, Diebold AC
Thin Solid Films, 519(9), 2929, 2011
6 Spectroscopic ellipsometry characterization of ultrathin silicon-on-insulator films
Price J, Diebold AC
Journal of Vacuum Science & Technology B, 24(4), 2156, 2006
7 Optical characterization of process-dependent charging in hafnium oxide structures
Carriles R, Kwon J, An YQ, Sun L, Stanley SK, Ekerdt JG, Downer MC, Price J, Boescke T, Diebold AC
Journal of Vacuum Science & Technology B, 24(4), 2160, 2006
8 Papers from the AVS-Ultra Clean Society Session - Preface
Diebold AC
Journal of Vacuum Science & Technology A, 17(5), 3124, 1999
9 Comparison of the submicron particle analysis capabilities of Auger electron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy with energy dispersive x-ray spectroscopy for particles deposited on silicon wafers with 1 mu m thick oxide layers
Diebold AC, Lindley P, Viteralli J, Kingsley J, Liu BYH, Woo KS
Journal of Vacuum Science & Technology A, 16(3), 1825, 1998
10 Comparison of the submicron particle analysis capabilities of Auger electron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy with energy dispersive x-ray spectroscopy for particles deposited on silicon wafers with one micron thick oxide layers (vol 16, pg 1825, 1998)
Diebold AC, Lindley P, Viteralli J, Kingsley J, Liu BYH, Woo KS
Journal of Vacuum Science & Technology A, 16(5), 3148, 1998