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Crystallinity of Electrically Scaled Atomic Layer Deposited HfO2 from a Cyclical Deposition and Annealing Scheme Consiglio S, Clark RD, Bersch E, LaRose JD, Wells I, Tapily K, Leusink GJ, Diebold AC Journal of the Electrochemical Society, 159(6), G80, 2012 |
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Spectroscopic ellipsometry characterization of high-k gate stacks with V-t shift layers Di M, Bersch E, Clark R, Consiglio S, Leusink G, Diebold AC Thin Solid Films, 519(9), 2889, 2011 |
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Extension of Far UV spectroscopic ellipsometry studies of High-kappa dielectric films to 130 nm Kamineni VK, Hilfiker JN, Freeouf JL, Consiglio S, Clark R, Leusink GJ, Diebold AC Thin Solid Films, 519(9), 2894, 2011 |
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Investigation of optical properties of benzocyclobutene wafer bonding layer used for 3D interconnects via infrared spectroscopic ellipsometry Kamineni VK, Singh P, Kong LW, Hudnall J, Qureshi J, Taylor C, Rudack A, Arkalgud S, Diebold AC Thin Solid Films, 519(9), 2924, 2011 |
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Dielectric properties and thickness metrology of strain engineered GaN/AlN/Si (111) thin films grown by MOCVD Tungare M, Kamineni VK, Shahedipour-Sandvik F, Diebold AC Thin Solid Films, 519(9), 2929, 2011 |
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Spectroscopic ellipsometry characterization of ultrathin silicon-on-insulator films Price J, Diebold AC Journal of Vacuum Science & Technology B, 24(4), 2156, 2006 |
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Optical characterization of process-dependent charging in hafnium oxide structures Carriles R, Kwon J, An YQ, Sun L, Stanley SK, Ekerdt JG, Downer MC, Price J, Boescke T, Diebold AC Journal of Vacuum Science & Technology B, 24(4), 2160, 2006 |
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Papers from the AVS-Ultra Clean Society Session - Preface Diebold AC Journal of Vacuum Science & Technology A, 17(5), 3124, 1999 |
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Comparison of the submicron particle analysis capabilities of Auger electron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy with energy dispersive x-ray spectroscopy for particles deposited on silicon wafers with 1 mu m thick oxide layers Diebold AC, Lindley P, Viteralli J, Kingsley J, Liu BYH, Woo KS Journal of Vacuum Science & Technology A, 16(3), 1825, 1998 |
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Comparison of the submicron particle analysis capabilities of Auger electron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy with energy dispersive x-ray spectroscopy for particles deposited on silicon wafers with one micron thick oxide layers (vol 16, pg 1825, 1998) Diebold AC, Lindley P, Viteralli J, Kingsley J, Liu BYH, Woo KS Journal of Vacuum Science & Technology A, 16(5), 3148, 1998 |