| 1 |
Differential conductance of an electrolytic cell in the presence of deposition of a coating material on the electrode
Saracco G, Alexe-Ionescu AL, Barbero G
Journal of Electroanalytical Chemistry, 741, 134, 2015 |
| 2 |
Transport behaviors and mechanisms in cuspidal blockade region for silicon single-hole transistor
Lee Y, Lee S, Hiramoto T
Current Applied Physics, 14(3), 428, 2014 |
| 3 |
Nitrogen doping effect upon hole tunneling characteristics of Si barriers in Si1-xGex/Si resonant tunneling diode
Kawashima T, Sakuraba M, Murota J
Thin Solid Films, 557, 302, 2014 |
| 4 |
Fabrication of high-Ge-fraction strained Si1-xGex/Si hole resonant tunneling diode using low-temperature Si2H6 reaction for nanometer-order ultrathin Si barriers
Takahashi K, Sakuraba M, Murota J
Solid-State Electronics, 60(1), 112, 2011 |
| 5 |
A THz-range planar NDR device utilizing ballistic electron acceleration in GaN
Aslan B, Eastman LF
Solid-State Electronics, 64(1), 57, 2011 |
| 6 |
Improvement in negative differential conductance characteristics of hole resonant-tunneling diodes with high Ge fraction Si/strained Si1-xGex/Si(100) heterostructure
Seo T, Takahashi K, Sakuraba M, Murota J
Solid-State Electronics, 53(8), 912, 2009 |
| 7 |
Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x > 0.4) Si/strained Si1-xGex/Si(100) heterostructure
Seo T, Sakuraba M, Murota J
Applied Surface Science, 254(19), 6265, 2008 |
| 8 |
Impact of Ge fraction modulation upon electrical characteristics of hole resonant tunneling diodes with Si/Strained Si(1-x)Ge(x)/Si(100) heterostructure
Seo T, Sakuraba M, Murota J
Thin Solid Films, 517(1), 110, 2008 |
| 9 |
Ambipolar Schottky barrier silicon-on-insulator metal-oxide-semiconductor transistors
Lin HC, Wang MF, Lu CY, Huang TY
Solid-State Electronics, 47(2), 247, 2003 |
