화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Studies on MOVPE growth of GaP epitaxial layer on Si(001) substrate and effects of annealing
Dixit VK, Ganguli T, Sharma TK, Kumar R, Porwal S, Shukla V, Ingale A, Tiwari P, Nath AK
Journal of Crystal Growth, 293(1), 5, 2006
2 Choice of electrolyte for doping profiling in Si by electrochemical C-V technique
Basaran E
Applied Surface Science, 172(3-4), 345, 2001
3 Determination of doping profiles on bevelled GaAs structures by Raman spectroscopy
Srnanek R, Kinder R, Sciana B, Radziewicz D, McPhail DS, Littlewood SD, Novotny I
Applied Surface Science, 177(1-2), 139, 2001