검색결과 : 3건
No. | Article |
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1 |
Studies on MOVPE growth of GaP epitaxial layer on Si(001) substrate and effects of annealing Dixit VK, Ganguli T, Sharma TK, Kumar R, Porwal S, Shukla V, Ingale A, Tiwari P, Nath AK Journal of Crystal Growth, 293(1), 5, 2006 |
2 |
Choice of electrolyte for doping profiling in Si by electrochemical C-V technique Basaran E Applied Surface Science, 172(3-4), 345, 2001 |
3 |
Determination of doping profiles on bevelled GaAs structures by Raman spectroscopy Srnanek R, Kinder R, Sciana B, Radziewicz D, McPhail DS, Littlewood SD, Novotny I Applied Surface Science, 177(1-2), 139, 2001 |