| 1 |
Control of interfacial layer growth during deposition of high-kappa oxide thin films in reactive RF-sputtering system
Rakshit A, Bose A, Biswas D, Roy M, Bhar R, Chakraborty S
Applied Surface Science, 423, 957, 2017 |
| 2 |
Extraordinary optical transmission: Role of the slit width in 1D metallic grating on higher refractive index substrate
Iqbal T, Afsheen S
Current Applied Physics, 16(4), 453, 2016 |
| 3 |
Improved high-k stacks with chemical oxide interfacial layer by DPN/PNA treatment
Li S, Chen YT, Chang SJ
Current Applied Physics, 15(3), 180, 2015 |
| 4 |
A comparative mismatch study of the 20 nm Gate-Last and 28 nm Gate-First bulk CMOS technologies
Rahhal L, Bajolet A, Manceau JP, Rosa J, Ricq S, Lassere S, Ghibaudo G
Solid-State Electronics, 108, 53, 2015 |
| 5 |
Formation of amorphous Yb2O3/crystalline ZrTiO4 gate stack and its application in n-MOSFET with sub-nm EOT
Lin CC, Wu YH, Wu CY, Lee CW
Applied Surface Science, 299, 47, 2014 |
| 6 |
Achieving low sub-0.6-nm EOT in gate-first n-MOSFET with TiLaO/CeO2 gate stack
Cheng CH, Chou KI, Chin A
Solid-State Electronics, 82, 111, 2013 |
| 7 |
Two-step annealing effects on ultrathin EOT higher-k (k=40) ALD-FifO(2) gate stacks
Morita Y, Migita S, Mizubayashi W, Masahara M, Ota H
Solid-State Electronics, 84, 58, 2013 |
| 8 |
Linewidth-Optimized Extraordinary Optical Transmission in Water with Template-Stripped Metallic Nanohole Arrays
Lee SH, Johnson TW, Lindquist NC, Im H, Norris DJ, Oh SH
Advanced Functional Materials, 22(21), 4439, 2012 |
| 9 |
Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs
Kawanago T, Lee Y, Kakushima K, Ahmet P, Tsutsui K, Nishiyama A, Sugii N, Natori K, Hattori T, Iwai H
Solid-State Electronics, 74, 2, 2012 |
| 10 |
High-field mobility metal-gate/high-kappa Ge n-MOSFETs with small equivalent-oxide-thickness
Chen WB, Cheng CH, Lin CW, Chen PC, Chin A
Solid-State Electronics, 55(1), 64, 2011 |
