화학공학소재연구정보센터
검색결과 : 25건
No. Article
1 Chemical state of phosphorous at the SiC/SiO2 interface
Pitthan E, Amarasinghe VP, Xu C, Gobbi AL, Dartora GHS, Gustafsson T, Feldman LC, Stedile FC
Thin Solid Films, 675, 172, 2019
2 4H-SiC surface energy tuning by nitrogen up-take
Pitthan E, Amarasinghe VP, Xu C, Gustafsson T, Stedile FC, Feldman LC
Applied Surface Science, 402, 192, 2017
3 Biological control of aragonite formation in stony corals
Von Euw S, Zhang QH, Manichev V, Murali N, Gross J, Feldman LC, Gustafsson T, Flach C, Mendelsohn R, Falkowski PG
Science, 356(6341), 933, 2017
4 Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery
Liu G, Xu Y, Xu C, Basile A, Wang F, Dhar S, Conrad E, Mooney P, Gustafsson T, Feldman LC
Applied Surface Science, 324, 30, 2015
5 Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation
Chen ZJ, Xu Y, Garfunkel E, Feldman LC, Buyuklimanli T, Ou W, Serfass J, Wan A, Dhar S
Applied Surface Science, 317, 593, 2014
6 Phosphorous passivation of the SiO2/4H-SiC interface
Sharma YK, Ahyi AC, Issacs-Smith T, Shen X, Pantelides ST, Zhu X, Feldman LC, Rozen J, Williams JR
Solid-State Electronics, 68, 103, 2012
7 Photon-Assisted Oxygen Diffusion and Oxygen-Related Traps in Organic Semiconductors
Najafov H, Mastrogiovanni D, Garfunkel E, Feldman LC, Podzorov V
Advanced Materials, 23(8), 981, 2011
8 DESORPTION OF H FROM SI(111) BY RESONANT EXCITATION OF THE Si-H vibrational stretch mode (Retraction of vol 312, pg 1024, 2006)
Liu ZH, Feldman LC, Tolk NH, Zhang ZY, Cohen PI
Science, 333(6051), 1824, 2011
9 The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H-SiC MOS devices
Zhu XG, Ahyi AC, Li MY, Chen ZJ, Rozen J, Feldman LC, Williams JR
Solid-State Electronics, 57(1), 76, 2011
10 Observation of long-range exciton diffusion in highly ordered organic semiconductors
Najafov H, Lee B, Zhou Q, Feldman LC, Podzorov V
Nature Materials, 9(11), 938, 2010