검색결과 : 25건
No. | Article |
---|---|
1 |
Chemical state of phosphorous at the SiC/SiO2 interface Pitthan E, Amarasinghe VP, Xu C, Gobbi AL, Dartora GHS, Gustafsson T, Feldman LC, Stedile FC Thin Solid Films, 675, 172, 2019 |
2 |
4H-SiC surface energy tuning by nitrogen up-take Pitthan E, Amarasinghe VP, Xu C, Gustafsson T, Stedile FC, Feldman LC Applied Surface Science, 402, 192, 2017 |
3 |
Biological control of aragonite formation in stony corals Von Euw S, Zhang QH, Manichev V, Murali N, Gross J, Feldman LC, Gustafsson T, Flach C, Mendelsohn R, Falkowski PG Science, 356(6341), 933, 2017 |
4 |
Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery Liu G, Xu Y, Xu C, Basile A, Wang F, Dhar S, Conrad E, Mooney P, Gustafsson T, Feldman LC Applied Surface Science, 324, 30, 2015 |
5 |
Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation Chen ZJ, Xu Y, Garfunkel E, Feldman LC, Buyuklimanli T, Ou W, Serfass J, Wan A, Dhar S Applied Surface Science, 317, 593, 2014 |
6 |
Phosphorous passivation of the SiO2/4H-SiC interface Sharma YK, Ahyi AC, Issacs-Smith T, Shen X, Pantelides ST, Zhu X, Feldman LC, Rozen J, Williams JR Solid-State Electronics, 68, 103, 2012 |
7 |
Photon-Assisted Oxygen Diffusion and Oxygen-Related Traps in Organic Semiconductors Najafov H, Mastrogiovanni D, Garfunkel E, Feldman LC, Podzorov V Advanced Materials, 23(8), 981, 2011 |
8 |
DESORPTION OF H FROM SI(111) BY RESONANT EXCITATION OF THE Si-H vibrational stretch mode (Retraction of vol 312, pg 1024, 2006) Liu ZH, Feldman LC, Tolk NH, Zhang ZY, Cohen PI Science, 333(6051), 1824, 2011 |
9 |
The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H-SiC MOS devices Zhu XG, Ahyi AC, Li MY, Chen ZJ, Rozen J, Feldman LC, Williams JR Solid-State Electronics, 57(1), 76, 2011 |
10 |
Observation of long-range exciton diffusion in highly ordered organic semiconductors Najafov H, Lee B, Zhou Q, Feldman LC, Podzorov V Nature Materials, 9(11), 938, 2010 |