| 1 |
In situ observation of low temperature growth of Ge on Si(111) by reflection high energy electron diffraction
Grimm A, Fissel A, Bugiel E, Wietler TF
Applied Surface Science, 370, 40, 2016 |
| 2 |
Influence of (7 x 7)-"1 x 1" phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si (111)
Fissel A, Chaudhuri AR, Krugener J, Osten HJ
Journal of Crystal Growth, 425, 154, 2015 |
| 3 |
Towards controlled molecular beam epitaxial growth of artificially stacked Si: Study of boron adsorption and surface segregation on Si(111)
Fissel A, Krugener J, Osten HJ
Journal of Crystal Growth, 323(1), 144, 2011 |
| 4 |
Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy
Fissel A, Dargis R, Bugiel E, Schwendt D, Wietler T, Krugener J, Laha A, Osten HJ
Thin Solid Films, 518(9), 2546, 2010 |
| 5 |
Epitaxial growth of Gd2O3 on surfactant-mediated grown Ge films on Si(001) substrates
Wietler TF, Laha A, Bugiel E, Czernohorsky M, Dargis R, Fissel A, Osten HJ
Solid-State Electronics, 53(8), 833, 2009 |
| 6 |
Integration of functional epitaxial oxides into silicon: From high-K application to nancistructures
Osten HJ, Kuhne D, Laha A, Czernohorsky M, Bugiel E, Fissel A
Journal of Vacuum Science & Technology B, 25(3), 1039, 2007 |
| 7 |
Epitaxial multi-component rare earth oxide for high-K application
Laha A, Fissel A, Bugiel E, Osten HJ
Thin Solid Films, 515(16), 6512, 2007 |
| 8 |
Formation of twinning-superlattice regions by artificial stacking of Si layers
Fissel A, Bugiel E, Wang CR, Osten HJ
Journal of Crystal Growth, 290(2), 392, 2006 |
| 9 |
Fabrication of single-crystalline insulator/Si/insulator nanostructures
Fissel A, Kuhne D, Bugiel E, Osten HJ
Journal of Vacuum Science & Technology B, 24(4), 2041, 2006 |
| 10 |
Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide
Fissel A, Czernohorsky M, Osten HJ
Journal of Vacuum Science & Technology B, 24(4), 2115, 2006 |
