검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Approach to the characterization of through-oxide boron implantation by secondary ion mass spectrometry Jiang ZX, Backer S, Lee JJ, Wu LY, Guenther T, Sieloff D, Choi P, Foisy M, Alkemade PFA Journal of Vacuum Science & Technology B, 19(4), 1133, 2001 |
| 2 |
Two-dimensional dopant profile of 0.2 mu m metal-oxide-semiconductor field effect transistors Wang XD, Mahaffy R, Tan K, Shih CK, Lee JJ, Foisy M Journal of Vacuum Science & Technology B, 18(1), 560, 2000 |
| 3 |
A conjugation-based version of the UNIFAC method Foisy M, Takamoto D, Mavrovouniotis ML Fluid Phase Equilibria, 137(1-2), 111, 1997 |