화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions
Liu Y, Guo J, Zhu EB, Liao L, Lee SJ, Ding MN, Shakir I, Gambin V, Huang Y, Duan XF
Nature, 557(7707), 696, 2018
2 Lyotropic Liquid-Crystalline Nanosystems as Drug Delivery Agents for 5-Fluorouracil: Structure and Cytotoxicity
Astolfi P, Giorgini E, Gambin V, Rossi B, Vaccari L, Vita F, Francescangeli O, Marchini C, Pisani M
Langmuir, 33(43), 12369, 2017
3 Effect of e-beam dose on the fractional density of Au-catalyzed GaAs nanowire growth
Park JH, Gambin V, Kodambaka S
Thin Solid Films, 607, 43, 2016
4 Zincblende to wurtzite transition during the self-catalyzed growth of InP nanostructures
Pozuelo M, Prikhodko SV, Grantab R, Zhou H, Gao L, Sitzman SD, Gambin V, Shenoy VB, Hicks RF, Kodambaka S
Journal of Crystal Growth, 312(16-17), 2305, 2010
5 Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxy
Gugov T, Gambin V, Wistey M, Yuen H, Bank S, Harris JS
Journal of Vacuum Science & Technology B, 22(3), 1588, 2004
6 The role of Sb in the MBE growth of (GaIn)(NAsSb)
Volz K, Gambin V, Ha W, Wistey MA, Yuen H, Bank S, Harris JS
Journal of Crystal Growth, 251(1-4), 360, 2003
7 1.5 mu m GaInNAs(Sb) lasers grown on GaAs by MBE
Bank S, Ha W, Gambin V, Wistey M, Yuen H, Goddard L, Kim S, Harris JS
Journal of Crystal Growth, 251(1-4), 367, 2003
8 Structural changes on annealing of MBE grown (Ga, In) (N, As) as measured by X-ray absorption fine structure
Gambin V, Lordi V, Ha W, Wistey M, Takizawa T, Uno K, Friedrich S, Harris J
Journal of Crystal Growth, 251(1-4), 408, 2003