| 1 |
Ge quantum-dot enhanced c-Si solar cell for improved light trapping efficiency
Liu B, Hu J, Jia LJ, Liu J, Ren XD, Zhang XS, Guo XJ, Liu SZ
Solar Energy, 167, 102, 2018 |
| 2 |
Room-temperature light-emission from Ge quantum dots in photonic crystals
Xia J, Nemoto K, Ikegami Y, Usami N, Nakata Y, Shiraki Y
Thin Solid Films, 517(1), 125, 2008 |
| 3 |
Precise control of size and density of self-assembled Ge dot on Si(100) by carbon-induced strain-engineering
Wakayama Y, Sokolov LV, Zakharov N, Werner R, Gosele U
Applied Surface Science, 216(1-4), 419, 2003 |
| 4 |
Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum
Peng YH, Chen CC, Kuan CH, Cheng HH
Solid-State Electronics, 47(10), 1775, 2003 |
| 5 |
Nano-interface engineering of Co/Ge/Si systems: metal incorporation into Ge quantum dots and SiO2/Si structures
Prabhakaran K, Sumitomo K, Ogino T
Applied Surface Science, 159, 492, 2000 |
| 6 |
Growth temperature dependence on the formation of carbon-induced Ge quantum dots
Kim JY, Ihm SH, Seok JH, Lee CH, Lee YH, Suh EK, Lee HJ
Thin Solid Films, 369(1-2), 96, 2000 |
