화학공학소재연구정보센터
검색결과 : 19건
No. Article
1 Epitaxial lift-off of InGaAs solar cells from InP substrate using a strained AlAs/InAlAs superlattice as a novel sacrificial layer
Chancerel F, Regreny P, Leclercq JL, Brottet S, Volatier M, Jaouad A, Darnon M, Fafard S, Blanchar NP, Gendry M, Aimez V
Solar Energy Materials and Solar Cells, 195, 204, 2019
2 Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon
Pinero JC, Araujo D, Pastore CE, Gutierrez M, Frigeri C, Benali A, Lelievre JF, Gendry M
Applied Surface Science, 395, 195, 2017
3 Study of the nucleation and growth of InP nanowires on silicon with gold-indium catalyst
Mavel A, Chauvin N, Regreny P, Patriarche G, Masenelli B, Gendry M
Journal of Crystal Growth, 458, 96, 2017
4 Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon
Naji K, Dumont H, Saint-Girons G, Penuelas J, Patriarche G, Hocevar M, Zwiller V, Gendry M
Journal of Crystal Growth, 343(1), 101, 2012
5 InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates
Khmissi H, Naji K, Alouane MHH, Chauvin N, Bru-Chevallier C, Ilahi B, Patriarche G, Gendry M
Journal of Crystal Growth, 344(1), 45, 2012
6 Morphological and structural properties of InP/Gd2O3 nanowires grown by molecular beam epitaxy on silicon substrate
Penuelas J, Lu X, Blanchard NP, Saint-Girons G, Vilquin B, Cremillieu P, Mazurczyk R, Gendry M
Journal of Crystal Growth, 347(1), 49, 2012
7 Tuning the structural properties of InAs nanocrystals grown by molecular beam epitaxy on silicon dioxide
Hocevar M, Patriarche G, Souifi A, Gendry M
Journal of Crystal Growth, 321(1), 1, 2011
8 Epitaxial growth of high-kappa oxides on silicon
Merckling C, Saint-Girons G, Delhaye G, Patriarche G, Largeau L, Favre-Nicollin V, El-Kazzi M, Regreny P, Vilquin B, Marty O, Botella C, Gendry M, Grenet G, Robach Y, Hollinger G
Thin Solid Films, 517(1), 197, 2008
9 Strain relaxation and critical thickness for epitaxial LaAlO3 thin films grown on SrTiO3(001) substrates by molecular beam epitaxy
Merckling C, El-Kazzi M, Delhaye G, Favre-Nicolin V, Robach Y, Gendry M, Grenet G, Saint-Girons G, Hollinger G
Journal of Crystal Growth, 306(1), 47, 2007
10 Hetero-epitaxy of SrTiO3 on Si and control of the interface
Delhaye G, El Kazzi M, Gendry M, Hollinger G, Robach Y
Thin Solid Films, 515(16), 6332, 2007