화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 X-ray diffraction analysis of thermally-induced stress relaxation in ZnO films deposited by magnetron sputtering on (100) Si substrates
Conchon F, Renault PO, Goudeau P, Le Bourhis E, Sondergard E, Barthel E, Grachev S, Gouardes E, Rondeau V, Gy R, Lazzari R, Jupille J, Brun N
Thin Solid Films, 518(18), 5237, 2010
2 Studies of MOVPE growth conditions for the improvement of GaInAsN on GaAs substrates for 1.3 mu m laser emission
Gouardes E, Alexandre F, Gauthier-Lafaye O, Vuong-Becaert A, Colson V, Thedrez B
Journal of Crystal Growth, 248, 446, 2003
3 Critical layer thickness of 1.2-mu m highly strained GaInAs/GaAs quantum wells
Schlenker D, Miyamoto T, Chen ZB, Kawaguchi M, Kondo T, Gouardes E, Koyama F, Iga K
Journal of Crystal Growth, 221, 503, 2000