| 1 |
In situ infrared spectroscopy study of the surface reactions during the atomic layer deposition of TiO2 on GaAs (100) surfaces
Ye LW, Kropp JA, Gougousi T
Applied Surface Science, 422, 666, 2017 |
| 2 |
Comparison of the reactivity of alkyl and alkyl amine precursors with native oxide GaAs(100) and InAs(100) surfaces
Henegar AJ, Gougousi T
Applied Surface Science, 390, 870, 2016 |
| 3 |
Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates
Storm DF, Deen DA, Katzer DS, Meyer DJ, Binari SC, Gougousi T, Paskova T, Preble EA, Evans KR, Smith DJ
Journal of Crystal Growth, 380, 14, 2013 |
| 4 |
Growth and Interface Evolution of HfO2 Films on GaAs(100) Surfaces
Gougousi T, Hackley JC, Demaree JD, Lacis JW
Journal of the Electrochemical Society, 157(5), H551, 2010 |
| 5 |
Native oxide consumption during the atomic layer deposition of TiO2 films on GaAs (100) surfaces
Gougousi T, Lacis JW
Thin Solid Films, 518(8), 2006, 2010 |
| 6 |
Properties of atomic layer deposited HfO2 thin films
Hackley JC, Gougousi T
Thin Solid Films, 517(24), 6576, 2009 |
| 7 |
Growth and interface of HfO2 films on H-terminated Si from a TDMAH and H2O atomic layer deposition process
Hackley JC, Demaree JD, Gougousi T
Journal of Vacuum Science & Technology A, 26(5), 1235, 2008 |
| 8 |
Deposition of yttrium oxide thin films in supercritical carbon dioxide
Gougousi T, Chen ZY
Thin Solid Films, 516(18), 6197, 2008 |
| 9 |
Charge generation during oxidation of thin Hf metal films on silicon
Gougousi T, Terry DB, Parsons GN
Thin Solid Films, 513(1-2), 201, 2006 |
| 10 |
Thickness metrology and end point control in W chemical vapor deposition process from SiH4/WF6 using in situ mass spectrometry
Xu Y, Gougousi T, Henn-Lecordier L, Liu Y, Cho S, Rubloff GW
Journal of Vacuum Science & Technology B, 20(6), 2351, 2002 |
