화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Modification of Sb/Si(001) interface by incorporation of In(4 x 3) surface reconstruction
Gruznev D, Ohmura K, Mori M, Tambo T, Lifshits VG, Tatsuyama C
Applied Surface Science, 237(1-4), 99, 2004
2 Atomic structure and formation process of the Si (111)-Sb(root 7 x root 7) surface phase
Gruznev D, Rao BV, Furukawa Y, Mori M, Tambo T, Lifshits VG, Tatsuyama C
Applied Surface Science, 212, 135, 2003
3 Study of Sb adsorption on the Si(0 0 1)-In(4 x 3) surface
Gruznev D, Furukawa Y, Mori M, Tambo T, Lifshits VG, Tatsuyama C
Applied Surface Science, 216(1-4), 35, 2003
4 Sb adsorption on Si(111)-In(4 x 1) surface phase
Rao BV, Gruznev D, Tambo T, Tatsuyama C
Applied Surface Science, 175, 187, 2001
5 Growth of high-quality InSb films on Si(111) substrates without buffer layers
Rao BV, Gruznev D, Tambo T, Tatsuyama C
Journal of Crystal Growth, 224(3-4), 316, 2001
6 Growth temperature effect on the heteroepitaxy of InSb on Si(111)
Rao BV, Okamoto T, Shinmura A, Gruznev D, Mori M, Tambo T, Tatsuyama C
Applied Surface Science, 159, 335, 2000
7 Role of In(4 x 1) superstructure on the heteroepitaxy of InSb on Si(111) substrate
Rao BV, Okamoto T, Shinmura A, Gruznev D, Tambo T, Tatsuyama C
Applied Surface Science, 162, 263, 2000