Molecular beam epitaxial growth of InSb on Si(1 1 1)7 x 7 surface is performed in the temperature range, 170-400 degreesC. Epitaxial growth is achieved by suitably adjusting the growth rate, In/Sb flux ratio and substrate temperature. For growth temperatures up to 300 degreesC surface morphology and the epitaxial quality of the film improve with temperature, whereas above 300 degreesC, an increase in growth temperature deteriorates the epitaxial growth. Hall measurements reveals that the electron mobility of the film increases with growth temperature and for the film grown at 300 degreesC it is about 2200 cm(2)V(-1)s(-1) at RT. Significant improvement in the electrical properties of the film is achieved using a two-step growth procedure, consists of 300 Angstrom thick interface layer growth at 300 degreesC followed by growth at 400 degreesC. The electron mobility of a 1.8 mum thick two-step grown film at RT is 23 000cm(2)V(-1) s(-1). Surface morphology, crystal quality and electrical properties of the grown films are discussed with respect to growth parameters.