화학공학소재연구정보센터
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No. Article
1 Correlation between pit formation and phase separation in thick InGaN film on a Si substrate
Woo H, Jo Y, Kim J, Cho S, Roh CH, Lee JH, Kim H, Hahn CK, Im H
Current Applied Physics, 18(12), 1558, 2018
2 Phase separation suppression in InxGa1-xN on a Si substrate using an indium modulation technique
Woo H, Jo H, Kim J, Cho S, Jo Y, Roh CH, Lee JH, Seo Y, Park J, Kim H, Hahn CK, Im H
Current Applied Physics, 17(8), 1142, 2017
3 Barrier lowering and leakage current reduction in Ni-AlGaN/GaN Schottky diodes with an oxygen-treated GaN cap layer
Woo H, Lee J, Jo Y, Han J, Kim J, Kim H, Roh CH, Lee JH, Park J, Hahn CK, Im H
Current Applied Physics, 15(9), 1027, 2015
4 Effect of heating on electrical transport in AlGaN/GaN Schottky barrier diodes on Si substrate
Woo H, Jo Y, Kim J, Roh C, Lee J, Kim H, Im H, Hahn CK, Park J
Current Applied Physics, 14, S98, 2014
5 Effects of post-oxidation on leakage current of high-voltage AlGaN/GaN Schottky barrier diodes on Si(111) substrates
Ha MW, Han MK, Hahn CK
Solid-State Electronics, 81, 1, 2013
6 Effects of metal spikes on leakage current of high-voltage GaN Schottky barrier diode
Ha MW, Lee JH, Han MK, Hahn CK
Solid-State Electronics, 73, 1, 2012
7 Effect of Pt and Ti on Ni/Ag/(Pt or Ti)/Au p-ohmic contacts of GaN based flip-chip LEDs
Song HJ, Roh CH, Choi HG, Ha MW, Hahn CK, Park JH, Lee JH
Applied Surface Science, 257(18), 8102, 2011
8 Effect of InN Interlayer in Growth of GaN on Si Substrates
Kim KW, Kim DS, Lee JH, Lee JH, Hahn CK
Electrochemical and Solid State Letters, 13(3), H66, 2010
9 Photoconductive characteristics in a trench-type InGaAs quantum-wire field effect transistor
Jang KY, Sugaya T, Hahn CK, Ogura M, Komori K, Shinoda A, Yonei K
Journal of Vacuum Science & Technology B, 22(3), 1523, 2004
10 Position and number control of self-assembled InAs quantum dots by selective area metalorganic vapor-phase epitaxy
Hahn CK, Motohisa J, Fukui T
Journal of Crystal Growth, 221, 599, 2000