| 1 |
Thickness-dependent surface morphology and crystallization of HfO2 coatings prepared with ion-assisted deposition
Zhang L, Zhang JL, Jiao HF, Bao GH, Wang ZS, Cheng XB
Thin Solid Films, 642, 359, 2017 |
| 2 |
High performance and the low voltage operating InGaZnO thin film transistor
Son DH, Kim DH, Sung SJ, Jung EA, Kang JK
Current Applied Physics, 10(4), E157, 2010 |
| 3 |
Electrical characterisation of HfYO MIM-structures deposited by ALD
Roessler T, Gluch J, Albert M, Bartha JW
Thin Solid Films, 518(16), 4680, 2010 |
| 4 |
Thickness dependence of high-k materials on the characteristics of MAHONOS structured charge trap flash memory
You HW, Oh SM, Cho WJ
Thin Solid Films, 518(22), 6460, 2010 |
| 5 |
Physical and electrical characteristics of hafnium oxide films on AlGaN/GaN heterostructure grown by pulsed laser deposition
Tian F, Chor EF
Thin Solid Films, 518(24), E121, 2010 |
| 6 |
Interface roughness effect between gate oxide and metal gate on dielectric property
Son JY, Maeng WJ, Kim WH, Shin YH, Kim H
Thin Solid Films, 517(14), 3892, 2009 |
| 7 |
Overview about the optical properties and mechanical stress of different dielectric thin films produced by reactive-low-voltage-ion-plating
Hallbauer A, Huber D, Strauss GN, Schlichtherle S, Kunz A, Pulker HK
Thin Solid Films, 516(14), 4587, 2008 |
| 8 |
Dependences of effective work functions of TaN on HfO(2) and SiO(2) on post-metallization anneal
Sugimoto Y, Kajiwara M, Yamamoto K, Suehiro Y, Wang D, Nakashima H
Thin Solid Films, 517(1), 204, 2008 |
| 9 |
Reliability degradation of thin HfO(2)/SiO(2) gate stacks by remote RF hydrogen and deuterium plasma treatment
Efthymiou E, Bernardini S, Zhang JF, Volkos SN, Hamilton B, Peaker AR
Thin Solid Films, 517(1), 207, 2008 |
| 10 |
Engineering of interfacial layer between HfAl(2)O(5) dielectric film and Si with a Ti-capping layer
Cheng XH, Song ZR, Xing YM, Yu YH, Shen DS
Thin Solid Films, 517(1), 462, 2008 |
