검색결과 : 50건
| No. | Article |
|---|---|
| 1 |
Behavior of Ga atoms deposited on GaAs (111)B and (111)A surfaces Kawaharazuka A, Horikoshi Y Journal of Crystal Growth, 477, 25, 2017 |
| 2 |
A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate Makimoto T, Kumakura K, Maeda M, Yamamoto H, Horikoshi Y Journal of Crystal Growth, 425, 138, 2015 |
| 3 |
Study of single crystal CuInSe2 thin films and CuGaSe2/CuInSe2 single quantum well grown by molecular beam epitaxy Thiru S, Asakawa M, Honda K, Kawaharazuka A, Tackeuchi A, Makimoto T, Horikoshi Y Journal of Crystal Growth, 425, 203, 2015 |
| 4 |
Recombination current in AlGaAs/GaAs superlattice solar-cells grown by molecular beam epitaxy Kawaharazuka A, Nishinaga J, Horikoshi Y Journal of Crystal Growth, 425, 326, 2015 |
| 5 |
Effects of surface barrier layer in AlGaAs/GaAs solar cells Urabe H, Kuramoto M, Nakano T, Kawaharazuka A, Makimoto T, Horikoshi Y Journal of Crystal Growth, 425, 330, 2015 |
| 6 |
Optical properties of AlxGa1-xAs/GaAs superlattice solar cells Kuramoto M, Urabe H, Nakano T, Kawaharazuka A, Nishinaga J, Makimoto T, Horikoshi Y Journal of Crystal Growth, 425, 333, 2015 |
| 7 |
Crystalline and electrical characteristics of C-60 uniformly doped GaAs layers Nishinaga J, Horikoshi Y Journal of Crystal Growth, 378, 81, 2013 |
| 8 |
Characteristics of CuGaSe2 layers grown on GaAs substrates Fujita M, Kawaharazuka A, Horikoshi Y Journal of Crystal Growth, 378, 154, 2013 |
| 9 |
Selective area growth of InAs nanostructures on faceted GaAs microstructures by migration enhanced epitaxy Zander M, Nishinaga J, Horikoshi Y Journal of Crystal Growth, 378, 480, 2013 |
| 10 |
Area selective epitaxy of In As on GaAs(001) and GaAs(111)A by migration enhanced epitaxy Zander M, Nishinaga J, Iga K, Horikoshi Y Journal of Crystal Growth, 323(1), 9, 2011 |