검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Self-heating and destruction of high-voltage 4H-SiC rectifier diodes under a single short current surge pulse Levinshtein ME, Ivanov PA, Mnatsakanov TT, Palmour JW, Das MK, Hull BA Solid-State Electronics, 52(11), 1802, 2008 |
| 2 |
Steady state self-heating and dc current-voltage characteristics of high-voltage 4H-SiC p(+)-n-n(+) rectifier diodes Levinshtein ME, Mnatsakanov TT, Vanov PA, Palmour JW, Das MK, Hull BA Solid-State Electronics, 51(6), 955, 2007 |
| 3 |
High power 4H-SiC pin diodes (10 kV class) with record high carrier lifetime Ivanov PA, Levinshtein ME, Palmour JW, Das MK, Hull BA Solid-State Electronics, 50(7-8), 1368, 2006 |
| 4 |
Drift-free, 50 A, 10 kV 4H-SiC PiN diodes with improved device yields Das MK, Sumakeris JJ, Hull BA, Richmond J, Krishnaswami S, Powell AR Materials Science Forum, 483, 965, 2005 |
| 5 |
High-temperature (up to 773 K) operation of 6-kV 4H-SiC junction diodes Levinshtein ME, Ivanov PA, Boltovets MS, Krivutsa VA, Palmour JW, Das MK, Hull BA Solid-State Electronics, 49(7), 1228, 2005 |
| 6 |
Compositional shift in AlxGa1-xN beneath annealed metal contacts Hull BA, Mohney SE, Chowdhury U, Dupuis RD Journal of Vacuum Science & Technology B, 22(2), 654, 2004 |
| 7 |
Design of a shallow thermally stable ohmic contact to p-type InGaSb Wang SH, Mohney SE, Hull BA, Bennett BR Journal of Vacuum Science & Technology B, 21(2), 633, 2003 |
| 8 |
Morphological study of the Al-Ti ohmic contact to p-type SiC Mohney SE, Hull BA, Lin JY, Crofton J Solid-State Electronics, 46(5), 689, 2002 |