검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Influence of trench period and depth on MOVPE grown (11(2)over-bar2) GaN on patterned r-plane sapphire substrates. Caliebe M, Tandukar S, Cheng ZZ, Hocker M, Han YS, Meisch T, Heinz D, Huber F, Bauer S, Plettl A, Humphreys C, Thonke K, Scholz F Journal of Crystal Growth, 440, 69, 2016 |
| 2 |
Origin of faceted surface hillocks on semi-polar (11(2)over-bar2) GaN templates grown on pre-structured sapphire Han YS, Caliebe M, Kappers M, Scholz F, Pristovsek M, Humphreys C Journal of Crystal Growth, 415, 170, 2015 |
| 3 |
Special issue: Characterization of real materials and real processing by transmission electron microscopy - Foreward Humphreys C Journal of Materials Science, 41(9), 2551, 2006 |
| 4 |
Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates Novikova SV, Zhao LX, Winser AJ, Kappers M, Barnard JS, Harrison I, Humphreys C, Foxon CT Journal of Crystal Growth, 256(3-4), 237, 2003 |
| 5 |
Chemical mapping of InGaN MQWs Sharma N, Tricker D, Thomas P, Bougrioua Z, Jacobs K, Cheyns J, Moerman I, Thrush T, Considine L, Boyd A, Humphreys C Journal of Crystal Growth, 230(3-4), 438, 2001 |
| 6 |
Material optimisation for AlGaN/GaN HFET applications Bougrioua Z, Moerman I, Sharma N, Wallis RH, Cheyns J, Jacobs K, Thrush EJ, Considine L, Beanland R, Farvacque JL, Humphreys C Journal of Crystal Growth, 230(3-4), 573, 2001 |
| 7 |
Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition Cho HK, Lee JY, Kim CS, Yang GM, Sharma N, Humphreys C Journal of Crystal Growth, 231(4), 466, 2001 |