| 1 |
Low-frequency noise characteristics of metamorphic In0.52Al0.48As/In0.60Ga0.40As double-heterostructure pseudomorphic high electron mobility transistors grown on a GaAs substrate
Kim JH, Yoon HS, Lee JH, Chang WJ, Shim JY, Lee KH, Song JI
Solid-State Electronics, 46(1), 69, 2002 |
| 2 |
Excitation Dependence of Photoluminescence Linewidth in InAlAs Grown on InP Substrates by Molecular-Beam Epitaxy
Yoon SF, Radhakrishnan K, Du Q
Thin Solid Films, 295(1-2), 310, 1997 |
| 3 |
A Photoluminescence and Raman-Scattering Study of the Properties of Si-Doped In0.52Al0.48As Grown Lattice-Matched to InP Substrates
Yoon SF, Miao YB, Radhakrishnan K
Journal of Materials Science Letters, 15(4), 311, 1996 |
| 4 |
Fermi-Edge Singularity in In0.53Ga0.47As/In0.52Al0.48As Modulation-Doped Quantum-Wells
Kim TW, Jung M, Park TH, Yoo KH
Journal of Materials Science Letters, 14(8), 545, 1995 |
| 5 |
Recent Progress on Magnetic Sensors with Nanostructures and Applications
Sugiyama Y
Journal of Vacuum Science & Technology B, 13(3), 1075, 1995 |
| 6 |
A Photoluminescence and X-Ray-Diffraction Analysis of InAlAs/InP Heterostructures Grown by Molecular-Beam Epitaxy
Yoon SF, Miao YB, Radhakrishnan K, Swaminathan S
Thin Solid Films, 266(2), 302, 1995 |
| 7 |
Large Oscillator Strength of Spatially Indirect Electron-Hole Recombination at Type-II Heterojunctions - The InAlAs/InP Case
Bimberg D, Bohrer J, Krost A
Journal of Vacuum Science & Technology A, 12(4), 1039, 1994 |
