| 1 |
Evolution of the gate current in 32 nm MOSFETs under irradiation
Palumbo F, Debray M, Vega N, Quinteros C, Kalstein A, Guarin F
Solid-State Electronics, 119, 19, 2016 |
| 2 |
Investigating the effects of the interface defects on the gate leakage current in MOSFETs
Mao LF
Applied Surface Science, 254(20), 6628, 2008 |
| 3 |
Electrical characteristic enhancement of metal-oxide-semiconductor devices by incorporating WON buffer layer at HfTaSiON/Si interface
Cheng CL, Chang-Liao KS, Chang HC, Wang TK
Solid-State Electronics, 50(6), 1024, 2006 |
| 4 |
Interface defect generation probed by low voltage stress induced leakage current
Yu YJ, Guo Q, Zeng X, Li H, Liu SH, Zou SC
Thin Solid Films, 504(1-2), 307, 2006 |
| 5 |
Study of nanocrystal memory reliability by CAST structures
Compagnoni CM, Ielmini D, Spinelli AS, Lacaita AL, Gerardi C
Solid-State Electronics, 48(9), 1497, 2004 |
| 6 |
Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress
Lee YM, Wu YD, Bae C, Hong JG, Lucovsky G
Solid-State Electronics, 47(1), 71, 2003 |
| 7 |
Modeling of anomalous SILC in flash memories based on tunneling at multiple defects
Ielmini D, Spinelli AS, Lacaita AL, Modelli A
Solid-State Electronics, 46(11), 1749, 2002 |
| 8 |
Reliability implications in advanced embedded two-transistor-Fowler-Nordheim-NOR flash memory devices
Scarpa A, Tao G, Dijkstra J, Kuper FG
Solid-State Electronics, 46(11), 1765, 2002 |
| 9 |
Experimental study of the current characteristics of thin silicon oxide films under dynamic stress
Zahlmann-Nowitzki JW, Nebrich L, Seegebrecht P
Solid-State Electronics, 45(8), 1309, 2001 |
| 10 |
Comparison of oxide leakage currents induced by ion implantation and high field electric stress
Goguenheim D, Bravaix A, Monserie C, Moragues JM, Lambert P, Boivin P
Solid-State Electronics, 45(8), 1355, 2001 |
