| 1 |
Structural study and ion-beam channelling in Si < 1 0 0 << modified by Kr+, Ag-+,Ag- 2+ and Au-+,Au- 2+ ions
Miksova R, Mackova A, Jagerova A, Malinsky P, Slepicka P, Svorcik V
Applied Surface Science, 458, 722, 2018 |
| 2 |
Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted Surface
Vishwanath V, Demenev E, Giubertoni D, Vanzetti L, Koh AL, Steinhauser G, Pepponi G, Bersani M, Meirer F, Foad MA
Applied Surface Science, 355, 792, 2015 |
| 3 |
Extended defects and precipitation in heavily B-doped silicon
Cojocaru-Miredin O, Cristiano F, Fazzini PF, Mangelinck D, Blavette D
Thin Solid Films, 534, 62, 2013 |
| 4 |
Influence of temperature-pressure treatment on heavily hydrogenated silicon surface
Ciosek J, Ratajczak J
Applied Surface Science, 252(18), 6115, 2006 |
| 5 |
Dielectric properties of nitric oxide-annealed gate oxides grown on nitrogen-implanted silicon substrates
Chen YY, Chien CH, Lou JC
Thin Solid Films, 513(1-2), 264, 2006 |
| 6 |
High resolution quantitative SIMS analysis of shallow boron implants in silicon using a bevel and image approach
Fearn S, McPhail DS
Applied Surface Science, 252(4), 893, 2005 |
| 7 |
Investigation of inhomogeneous structures of near-surface-layers in ion-implanted silicon
Swiatek Z, Bonarski JT, Ciach R, Kuznicki ZT, Fodchuk IM, Raransky MD, Gorley P
Thin Solid Films, 319(1-2), 39, 1998 |
| 8 |
Investigation on the Distribution of Fluorine and Boron in Polycrystalline Silicon Silicon Systems
Chen TP, Lei TF, Chang CY, Hsieh WY, Chen LJ
Journal of the Electrochemical Society, 142(6), 2000, 1995 |
| 9 |
A Point-Defect Based 2-Dimensional Model of the Evolution of Dislocation Loops in Silicon During Oxidation
Park HY, Jones KS, Law ME
Journal of the Electrochemical Society, 141(3), 759, 1994 |
| 10 |
The Annealing Time and Temperature-Dependence of Electrical Dopant Activation in High-Dose Bf2 Ion-Implanted Silicon
Kato J
Journal of the Electrochemical Society, 141(11), 3158, 1994 |
