화학공학소재연구정보센터
검색결과 : 63건
No. Article
1 Full capacitance model, considering the specifics of amorphous oxide semiconductor thin film transistors structures
Cerdeira A, Estrada M, Hernandez-Barrios Y, Hernandez I, Iniguez B
Solid-State Electronics, 156, 16, 2019
2 Analytical modeling of capacitances in tunnel-FETs including the effect of Schottky barrier contacts
Farokhnejad A, Schwarz M, Horst F, Iniguez B, Lime F, Kloes A
Solid-State Electronics, 159, 191, 2019
3 Advanced analytical modeling of double-gate Tunnel-FETs - A performance evaluation
Graef M, Hosenfeld F, Horst F, Farokhnejad A, Hain F, Iniguez B, Kloes A
Solid-State Electronics, 141, 31, 2018
4 Accurate semi empirical predictive model for doped and undoped double gate MOSFET
Cabre R, Muhea WE, Iniguez B
Solid-State Electronics, 149, 23, 2018
5 An insight to mobility parameters for AOSTFTs, when the effect of both, localized and free carriers, must be considered to describe the device behavior
Hernandez-Barrios Y, Cerdeira A, Estrada M, Iniguez B
Solid-State Electronics, 149, 32, 2018
6 Charge based, continuous compact model for the channel current in organic thin-film transistors for all regions of operation
Hain F, Graef M, Iniguez B, Kloes A
Solid-State Electronics, 133, 17, 2017
7 A compact explicit DC model for short channel Gate-All-Around junctionless MOSFETs
Lime F, Avila-Herrera F, Cerdeira A, Iniguez B
Solid-State Electronics, 131, 24, 2017
8 Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors
Estrada M, Hernandez-Barrios Y, Cerdeira A, Avila-Herrera F, Tinoco J, Moldovan O, Lime F, Iniguez B
Solid-State Electronics, 135, 43, 2017
9 A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations
Hosenfeld F, Horst F, Iniguez B, Lime F, Kloes A
Solid-State Electronics, 137, 70, 2017
10 A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors
Moldovan O, Castro-Carranza A, Cerdeira A, Estrada M, Barquinha P, Martins R, Fortunato E, Miljakovic S, Iniguez B
Solid-State Electronics, 126, 81, 2016