1 |
Full capacitance model, considering the specifics of amorphous oxide semiconductor thin film transistors structures Cerdeira A, Estrada M, Hernandez-Barrios Y, Hernandez I, Iniguez B Solid-State Electronics, 156, 16, 2019 |
2 |
Analytical modeling of capacitances in tunnel-FETs including the effect of Schottky barrier contacts Farokhnejad A, Schwarz M, Horst F, Iniguez B, Lime F, Kloes A Solid-State Electronics, 159, 191, 2019 |
3 |
Advanced analytical modeling of double-gate Tunnel-FETs - A performance evaluation Graef M, Hosenfeld F, Horst F, Farokhnejad A, Hain F, Iniguez B, Kloes A Solid-State Electronics, 141, 31, 2018 |
4 |
Accurate semi empirical predictive model for doped and undoped double gate MOSFET Cabre R, Muhea WE, Iniguez B Solid-State Electronics, 149, 23, 2018 |
5 |
An insight to mobility parameters for AOSTFTs, when the effect of both, localized and free carriers, must be considered to describe the device behavior Hernandez-Barrios Y, Cerdeira A, Estrada M, Iniguez B Solid-State Electronics, 149, 32, 2018 |
6 |
Charge based, continuous compact model for the channel current in organic thin-film transistors for all regions of operation Hain F, Graef M, Iniguez B, Kloes A Solid-State Electronics, 133, 17, 2017 |
7 |
A compact explicit DC model for short channel Gate-All-Around junctionless MOSFETs Lime F, Avila-Herrera F, Cerdeira A, Iniguez B Solid-State Electronics, 131, 24, 2017 |
8 |
Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors Estrada M, Hernandez-Barrios Y, Cerdeira A, Avila-Herrera F, Tinoco J, Moldovan O, Lime F, Iniguez B Solid-State Electronics, 135, 43, 2017 |
9 |
A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations Hosenfeld F, Horst F, Iniguez B, Lime F, Kloes A Solid-State Electronics, 137, 70, 2017 |
10 |
A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors Moldovan O, Castro-Carranza A, Cerdeira A, Estrada M, Barquinha P, Martins R, Fortunato E, Miljakovic S, Iniguez B Solid-State Electronics, 126, 81, 2016 |