| 1 |
Wet chemical surface smoothing method for improving surface passivation on monocrystalline silicon
Ji FX, Zhou CL, Jia XJ, Gong L, Zhu JJ, Wang WJ
Chemical Physics Letters, 730, 60, 2019 |
| 2 |
Influence on curvature induced stress to the flatband voltage and interface density of 4H-SiC MOS structure
Xu HY, Wan CP, Sang L, Ao JP
Journal of Crystal Growth, 505, 59, 2019 |
| 3 |
AlN passivation effect on Au/GaN Schottky contacts
Kim H, Kwon Y, Choi BJ
Thin Solid Films, 670, 41, 2019 |
| 4 |
Rectifying and breakdown voltage enhancement of Au/n-GaN Schottky diode with Al-doped ZnO films and its structural characterization
Janardhanam V, Jyothi I, Lee SN, Reddy VR, Choi CJ
Thin Solid Films, 676, 125, 2019 |
| 5 |
질산산화법을 이용한 SiO2/Si 구조의 계면결함 제거
최재영, 김도연, 김우병
Korean Journal of Materials Research, 28(2), 118, 2018 |
| 6 |
Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2
Jung WS, Lim D, Han H, Sokolov AS, Jeon YR, Choi C
Solid-State Electronics, 149, 52, 2018 |
| 7 |
Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities
Stegemann B, Gad KM, Balamou P, Sixtensson D, Vossing D, Kasemann M, Angermann H
Applied Surface Science, 395, 78, 2017 |
| 8 |
A concise way to estimate the average density of interface states in an ITO-SiOx/n-Si heterojunction solar cell
Li Y, Han BC, Gao M, Wan YZ, Yang J, Du HW, Ma ZQ
Applied Surface Science, 416, 432, 2017 |
| 9 |
Electrical and frequency-dependent properties of Au/Sm2O3/n-GaN MIS junction with a high-k rare-earth Sm2O3 as interlayer
Manjunath V, Reddy VR, Reddy PRS, Janardhanam V, Choi CJ
Current Applied Physics, 17(7), 980, 2017 |
| 10 |
Comparison of Electrical Properties between Sputter Deposited Au and Cu Schottky Contacts to n-type Ge
Kim H, Kim M, Kim YJ
Korean Journal of Materials Research, 26(10), 556, 2016 |
