검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Crystal growth of InN by MOCVD with electric field along the c-axis Ota Y, Biswas R, Higo M, Inushima T Journal of Crystal Growth, 311(10), 2806, 2009 |
| 2 |
Relationship between the optical properties and superconductivity of InN with high carrier concentration Inushima T, Sakon T, Motokawa M Journal of Crystal Growth, 269(1), 173, 2004 |
| 3 |
In-situ monitoring of AlN crystal growth on 6H-SiC by the use of a pyrometer Suzuki T, Inushima T Materials Science Forum, 457-460, 1565, 2004 |
| 4 |
Physical properties of InN with the band gap energy of 1.1eV Inushima T, Mamutin VV, Vekshin VA, Ivanov SV, Sakon T, Motokawa M, Ohoya S Journal of Crystal Growth, 227, 481, 2001 |
| 5 |
Heteroepitaxial growth of AlN at the resonance point of nitrogen-ECR plasma Inushima T, Ashino T, Murano K, Shiraishi T, Davydov VY, Ohoya S Journal of Crystal Growth, 209(2-3), 406, 2000 |
| 6 |
Comparison of AlN thin films grown on sapphire and cubic-SiC substrates by LP-MOCVD Tanaka Y, Hasebe Y, Inushima T, Sandhu A, Ohoya S Journal of Crystal Growth, 209(2-3), 410, 2000 |
| 7 |
A novel low temperature plasma generator with alumina coated electrode for open air material processing Koide M, Horiuchi T, Inushima T, Lee BJ, Tobayama M, Koinuma H Thin Solid Films, 316(1-2), 65, 1998 |