검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
On the anisotropic wafer curvature of GaN-based heterostructures on Si(110) substrates grown by MOVPE Mauder C, Booker ID, Fahle D, Boukiour H, Behmenburg H, Khoshroo LR, Woitok JF, Vescan A, Heuken M, Kalisch H, Jansen RH Journal of Crystal Growth, 315(1), 220, 2011 |
| 2 |
Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates Mauder C, Reuters B, Wang KR, Fahle D, Trampert A, Rzheutskii MV, Lutsenko EV, Yablonskii GP, Woitok JF, Chou MMC, Heuken M, Kalisch H, Jansen RH Journal of Crystal Growth, 315(1), 246, 2011 |
| 3 |
Investigation of AlN buffer layers on 6H-SiC for AlInN HEMTs grown by MOVPE Behmenburg H, Giesen C, Srnanek R, Kovac J, Kalisch H, Heuken M, Jansen RH Journal of Crystal Growth, 316(1), 42, 2011 |
| 4 |
Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates Mauder C, Reuters B, Khoshroo LR, Rzheutskii MV, Lutsenko EV, Yablonskii GP, Woitok JF, Heuken M, Kalisch H, Jansen RH Journal of Crystal Growth, 312(11), 1823, 2010 |
| 5 |
Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates Mauder C, Khoshroo LR, Behmenburg H, Wen TC, Dikme Y, Rzheutskii MV, Yablonskii GP, Woitok J, Chou MMC, Heuken M, Kalisch H, Jansen RH Journal of Crystal Growth, 310(23), 4976, 2008 |
| 6 |
MOVPE, processing and characterization of AlGaN/GaN HEMTs with different Al concentrations on silicon substrates Fieger M, Eickelkamp M, Koshroo LR, Dikme Y, Noculak A, Kalisch H, Heuken M, Jansen RH, Vescan A Journal of Crystal Growth, 298, 843, 2007 |
| 7 |
Influence of thermal annealing on photoluminescence and structural properties of N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1, 1'-biphenyl-4,4'-diamine (alpha-NPD) organic thin films Osipov KA, Pavlovskii VN, Lutsenko EV, Gurskii AL, Yablonskii GP, Hartmann S, Janssen A, Johannes HH, Caspary R, Kowalsky W, Meyer N, Gersdorff A, Heuken A, van Gemmern P, Zimmermann C, Jessen F, Kalisch H, Jansen RH Thin Solid Films, 515(11), 4834, 2007 |
| 8 |
Characterization of GaN grown on patterned Si(111) substrates Wang D, Dikme Y, Jia S, Chen KJ, Lau KM, van Gemmern P, Lin YC, Kalisch H, Jansen RH, Heuken M Journal of Crystal Growth, 272(1-4), 489, 2004 |
| 9 |
Growth and characterization of GaN-based structures on SiCOI-engineered substrates Dikme Y, van Gemmern P, Lin YC, Szymakowski A, Kalisch H, Faure B, Richtarch C, Larheche H, Bove P, Letertre F, Woitok JF, Efthimiadis K, Jansen RH, Heuken M Journal of Crystal Growth, 272(1-4), 500, 2004 |
| 10 |
Investigation of buffer growth temperatures for MOVPE of GaN on Si(111) Dikme Y, Gerstenbrandt G, Alam A, Kalisch H, Szymakowski A, Fieger M, Jansen RH, Heuken M Journal of Crystal Growth, 248, 578, 2003 |