검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Interface states at the SiO2/4H-SiC(0001) interface from first-principles: Effects of Si-Si bonds and of nitrogen atom termination Ohnuma T, Tsuchida H, Jikimoto T, Miyashita A, Yoshikawa M Materials Science Forum, 483, 573, 2005 |
| 2 |
Improvement in electrical performance of Schottky contacts for high-voltage diode Nakamura T, Miyanagi T, Tsuchida H, Kamata I, Jikimoto T, Izumi K Materials Science Forum, 483, 721, 2005 |
| 3 |
Interface states in abrupt SiO2/4H-and 6H-SiC(0001) from first-principles: Effects of Si dangling bonds, C dangling bonds and C clusters Ohnuma T, Tsuchida H, Jikimoto T Materials Science Forum, 457-460, 1297, 2004 |
| 4 |
Epitaxial growth of thick 4H-SiC layers in a vertical radiant-heating reactor Tsuchida H, Kamata I, Jikimoto T, Izumi K Journal of Crystal Growth, 237, 1206, 2002 |
| 5 |
Growth and electrical characterization of lightly-doped thick 4H-SiC epilayers Tsuchida H, Kamata I, Jikimoto T, Izumi K Materials Science Forum, 389-3, 171, 2002 |
| 6 |
In situ analysis of thermal oxidation on H-terminated 4H-SiC surfaces Jikimoto T, Tsuchida H, Kamata I, Izumi K Materials Science Forum, 389-3, 709, 2002 |
| 7 |
The investigation of 4H-SiC/SiO2 interfaces by optical and electrical measurements Ishida Y, Takahashi T, Okumura H, Jikimoto T, Tsuchida H, Yoshikawa M, Tomioka Y, Midorikawa M, Hijikata Y, Yoshida S Materials Science Forum, 389-3, 1013, 2002 |
| 8 |
A comparative study of the electrical properties of 4H-SiC epilayers with continuous and dissociated micropipes Kamata I, Tsuchida H, Jikimoto T, Izumi K Materials Science Forum, 389-3, 1137, 2002 |
| 9 |
Analysis of high leakage currents in 4H-SiC Schottky barrier diodes using optical beam-induced current measurements Tsuji T, Izumi S, Ueda A, Fujisawa H, Ueno K, Tsuchida H, Kamata I, Jikimoto T, Izumi K Materials Science Forum, 389-3, 1141, 2002 |
| 10 |
Electroluminescence analysis of Al+ and B+ implanted pn diodes Fujisawa H, Tsuji T, Izumi S, Ueno K, Kamata I, Tsuchida T, Jikimoto T, Izumi K Materials Science Forum, 389-3, 1297, 2002 |