검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region Rossow U, Kruse A, Jonen H, Hoffmann L, Ketzer F, Langer T, Buss R, Bremers H, Hangleiter A, Mehrtens T, Schowalter M, Rosenauer A Journal of Crystal Growth, 370, 105, 2013 |
| 2 |
Growth of the active zone in nitride based long wavelength laser structures Rossow U, Jonen H, Brendel M, Drager A, Langer T, Hoffmann L, Bremers H, Hangleiter A Journal of Crystal Growth, 315(1), 250, 2011 |
| 3 |
Growth and characterization of InGaN by RF-MBE Kraus A, Hammadi S, Hisek J, Buss R, Jonen H, Bremers H, Rossow U, Sakalauskas E, Goldhahn R, Hangleiter A Journal of Crystal Growth, 323(1), 72, 2011 |
| 4 |
Growth of InxGa1-xN/GaN QW structures with high indium concentration on c-plane and m-plane surfaces by MOVPE Jonen H, Rossow U, Langer T, Drager A, Hoffmann L, Bremers H, Hangleiter A, Bertram F, Metzner S, Christen J Journal of Crystal Growth, 310(23), 4987, 2008 |