| 1 |
Engineering of AlON interlayer in Al2O3/AlON/In0.53Ga0.47As gate stacks by thermal atomic layer deposition
Lee WC, Cho CJ, Park SI, Jun DH, Song JD, Hwang CS, Kim SK
Current Applied Physics, 18(8), 919, 2018 |
| 2 |
Engineering of AlON interlayer in Al2O3/AlON/In0.53Ga0.47As gate stacks by thermal atomic layer deposition
Lee WC, Cho CJ, Park SI, Jun DH, Song JD, Hwang CS, Kim SK
Current Applied Physics, 18(8), 919, 2018 |
| 3 |
Influences of surface treatment on In0.53Ga0.47As epitaxial layer grown on silicon substrate using trimethylaluminum
Kim SB, Lee SH, Jung HJ, Seo MS, Kim SM, Lee S, Park JY, Park TJ, Jeong HY, Jun DH, Park KH, Park WK, Lee SW
Thin Solid Films, 646, 173, 2018 |
| 4 |
Effect of AlGaAs barrier layer on the characteristics of InGaP/InGaAs/Ge triple junction solar cells
Jung SH, Kim CZ, Jun DH, Park W, Kang HK, Lee J, Kim H
Current Applied Physics, 14(11), 1476, 2014 |
| 5 |
Efficiency improvement of III-V GaAs solar cells using biomimetic TiO2 subwavelength structures with wide-angle and broadband antireflection properties
Leem JW, Yu JS, Jun DH, Heo J, Park WK
Solar Energy Materials and Solar Cells, 127, 43, 2014 |
| 6 |
오일샌드 bitumen 가스화기 시스템의 중질잔사유 적용 가스화 운전특성
정석우, 이도연, 정우현, 박준성, 전동환
Applied Chemistry, 13(1), 153, 2009 |
