| 1 |
Numerical investigation of plasma effects in silicon MOSFETs for THz-wave detection
Jungemann C, Linn T, Bittner K, Brachtendorf HG
Solid-State Electronics, 128, 129, 2017 |
| 2 |
Deterministic solvers for the Boltzmann transport equation of 3D and quasi-2D electron and hole systems in SiGe devices
Jungemann C, Pham AT, Hong SM, Smith L, Meinerzhagen B
Solid-State Electronics, 84, 112, 2013 |
| 3 |
Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations
Pham AT, Soree B, Magnus W, Jungemann C, Meinerzhagen B, Pourtois G
Solid-State Electronics, 71, 30, 2012 |
| 4 |
Improving the high-frequency performance of SiGe HBTs by a global additional uniaxial stress
Dinh TV, Hong SM, Jungemann C
Solid-State Electronics, 60(1), 58, 2011 |
| 5 |
Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs: C-V characteristics, mobility, and ON current
Pham AT, Zhao QT, Jungemann C, Meinerzhagen B, Mantl S, Soree B, Pourtois G
Solid-State Electronics, 65-66, 64, 2011 |
| 6 |
Investigation of the performance of strained-SiGe vertical IMOS-transistors
Dinh TV, Kraus R, Jungemann C
Solid-State Electronics, 54(9), 942, 2010 |
| 7 |
Impact ionization rates for strained Si and SiGe
Dinh TV, Jungemann C
Solid-State Electronics, 53(12), 1318, 2009 |
| 8 |
Modeling and validation of piezoresistive coefficients in Si hole inversion layers
Pham AT, Jungemann C, Meinerzhagen B
Solid-State Electronics, 53(12), 1325, 2009 |
| 9 |
Microscopic modeling of hole inversion layer mobility in unstrained and uniaxially stressed Si on arbitrarily oriented substrates
Pham AT, Jungemann C, Meinerzhagen B
Solid-State Electronics, 52(9), 1437, 2008 |
| 10 |
Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers
Pham AT, Jungemann C, Klawitter M, Meinerzhagen B
Solid-State Electronics, 52(10), 1660, 2008 |
