| 1 |
Impacts of thermal stress and doping on intrinsic point defect properties and clustering during single crystal silicon and germanium growth from a melt
Vanhellemont J, Kamiyama E, Nakamura K, Spiewak P, Sueoka K
Journal of Crystal Growth, 474, 96, 2017 |
| 2 |
Comment on "Investigations of interstitial generations near growth interface depending on crystal pulling rates during CZ silicon growth by detaching from the melt" by T. Abe et al. [J. Cryst. Growth 434 (2016) 128-137] and on "Observations of secondary defects and vacancies in CZ silicon crystals detached from melt using four different types of characterization technique" by T. Abe et al. [J. Cryst. Growth 436 (2016) 23-33] Discussion
Vanhellemont J, Kamiyama E, Nakamura K, Sueoka K
Journal of Crystal Growth, 449, 163, 2016 |
| 3 |
Atom probe tomography study on Ge1-x - ySnxCy hetero-epitaxial film on Ge substrates
Kamiyama E, Sueoka K, Terasawa K, Yamaha T, Nakatsuka O, Zaima S, Izunome K, Kashima K, Uchida H
Thin Solid Films, 592, 54, 2015 |
| 4 |
Analysis for positions of Sn atoms in epitaxial Ge-1 (-) Sn-x(x) film in low temperature depositions
Kamiyama E, Sueoka K, Nakatsuka O, Taoka N, Zaima S, Izunome K, Kashima K
Thin Solid Films, 557, 173, 2014 |
| 5 |
Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals
Sueoka K, Kamiyama E, Vanhellemont J
Journal of Crystal Growth, 363, 97, 2013 |
| 6 |
Effect of dangling bonds of ultra-thin silicon film surface on electronic states of internal atoms
Kamiyama E, Sueoka K
Applied Surface Science, 258(13), 5265, 2012 |
| 7 |
Long-Range Interaction between H and (B or P) Dopant Atoms in Silicon Crystals Investigated by First Principles Calculation
Kamiyama E, Sueoka K
Journal of the Electrochemical Society, 159(4), H450, 2012 |
| 8 |
Impact of the Formation of Dimer Structures at the Surface on the Internal Atoms of Si Thin Film
Kamiyama E, Sueoka K
Journal of the Electrochemical Society, 157(3), H323, 2010 |
