화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 MOVPE growth of Ga(AsBi)/GaAs using different metalorganic precursors
Nattermann L, Ludewig P, Meckbach L, Ringler B, Keiper D, von Hanisch C, Stolz W, Volz K
Journal of Crystal Growth, 426, 54, 2015
2 Optical constants of diindenoperylene in the dependence of preparation temperature and pressure
Greiner D, Hinrichs V, Wiesner S, Ludwig W, Fostiropoulos K, Keiper D, Baumann PK, Meyer N, Heuken M, Rusu M, Lux-Steiner MC
Thin Solid Films, 534, 255, 2013
3 X-ray characterization of stacked InP/(InGa)As : C HBT and InP/(InGa)As HEMT layer sequences grown by LP-MOVPE using non-gaseous sources
Velling P, Keiper D, Brennemann A, Agethen M, Janssen G, Bertenburg RM
Journal of Crystal Growth, 248, 139, 2003
4 MOVPE growth of InAlAs using TBAs and DitBuSi for HEMT applications
Keiper D, Velling P, Brennemann A, Agethen M, van den Berg C, Bertenburg RM, Schineller B, Heuken M
Journal of Crystal Growth, 248, 153, 2003
5 Effect of the carrier gas and the group-V precursor on the doping efficiency of SiH4 for InP and In0.54Ga0.46As/InP in LP-MOVPE
Keiper D
Journal of Crystal Growth, 233(1-2), 121, 2001
6 Effect of the carrier gas and the group-V precursor on the DEZn doping efficiency for InP and In0.54Ga0.46As in LP-MOVPE
Keiper D, Westphalen R
Journal of Crystal Growth, 233(1-2), 126, 2001