검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Annealing studies of AN capped, MOCVD grown GaN films Derenge MA, Kirchner KW, Jones KA, Suvarna P, Shahedipour-Sandvik S Solid-State Electronics, 101, 23, 2014 |
| 2 |
HVPE GaN for high power electronic Schottky diodes Tompkins RP, Walsh TA, Derenge MA, Kirchner KW, Zhou S, Nguyen CB, Jones KA, Mulholland G, Metzger R, Leach JH, Suvarna P, Tungare M, Shahedipour-Sandvik F Solid-State Electronics, 79, 238, 2013 |
| 3 |
Growth of GaN films on PLD-deposited TaC substrates Kirchner KW, Derenge MA, Zheleva TS, Vispute RD, Jones KA Journal of Crystal Growth, 312(19), 2661, 2010 |
| 4 |
A comparison of the AIN annealing cap for 4H-SiC annealed in nitrogen versus argon atmosphere Derenge MA, Jones KA, Kirchner KW, Ervin MH, Zheleva TS, Hullavarad S, Vispute RD Solid-State Electronics, 48(10-11), 1867, 2004 |
| 5 |
Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC Ruppalt LB, Stafford S, Yuan D, Jones KA, Ervin MH, Kirchner KW, Zheleva TS, Wood MC, Geil BR, Forsythe E, Vispute RD, Venkatesan T Solid-State Electronics, 47(2), 253, 2003 |