검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties Dominec F, Hospodkova A, Hubacek T, Zikova M, Pangrac J, Kuldova K, Vetushka A, Hulicius E Journal of Crystal Growth, 507, 246, 2019 |
| 2 |
Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface Hubacek T, Hospodkova A, Oswald J, Kuldova K, Pangrac J, Zikova M, Hajek F, Dominec F, Florini N, Komninou P, Ledoux G, Dujardin C Journal of Crystal Growth, 507, 310, 2019 |
| 3 |
Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties Zikova M, Hospodkova A, Pangrac J, Hubacek T, Oswald J, Kuldova K, Hajek F, Ledoux G, Dujardin C Journal of Crystal Growth, 506, 8, 2019 |
| 4 |
Improvement of luminescence properties of GaN buffer layer for fast nitride scintillator structures Hubacek T, Hospodkova A, Oswald J, Kuldova K, Pangrac J Journal of Crystal Growth, 464, 221, 2017 |
| 5 |
Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots Hospodkova A, Zikova M, Pangrac J, Oswald J, Kuldova K, Vyskocil J, Hulicius E Journal of Crystal Growth, 370, 303, 2013 |
| 6 |
Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures Hospodkova A, Pangrac J, Oswald J, Hazdra P, Kuldova K, Vyskocil J, Hulicius E Journal of Crystal Growth, 315(1), 110, 2011 |
| 7 |
InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime Hospodkova A, Pangrac J, Vyskocil J, Oswald J, Vetushka A, Caha O, Hazdra P, Kuldova K, Hulicius E Journal of Crystal Growth, 317(1), 39, 2011 |
| 8 |
InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots Hospodkova A, Hulicius E, Pangrac J, Oswald J, Vyskocil J, Kuldova K, Simecek T, Hazdra P, Caha O Journal of Crystal Growth, 312(8), 1383, 2010 |
| 9 |
Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures Hulicius E, Oswald J, Pangrac J, Vyskocil J, Hospodkova A, Kuldova K, Melichar K, Simecek T Journal of Crystal Growth, 310(7-9), 2229, 2008 |
| 10 |
Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots Hospodkova A, Pangrac J, Oswald J, Hulicius E, Kuldova K, Vyskocil J, Melichar K, Simecek T Journal of Crystal Growth, 310(23), 5081, 2008 |