검색결과 : 20건
| No. | Article |
|---|---|
| 1 |
Improved Photobleaching for (1,10-phenanthroline)tris[4,4,4-trifluoro-1-(2-thienyl)-1,3-butanedionat o]europium(III) Particle Embedded in Sol-Gel Derived Glass Film Kurabayashi T, Yamaki T, Fukuda T, Kamata N Molecular Crystals and Liquid Crystals, 621(1), 136, 2015 |
| 2 |
Effective formation of ethyl acetate from ethanol over Cu-Zn-Zr-Al-O catalyst Inui K, Kurabayashi T, Sato S, Ichikawa N Journal of Molecular Catalysis A-Chemical, 216(1), 147, 2004 |
| 3 |
Method for thin-film technology of Si with doping Nishizawa J, Kurabayashi T, Oizumi T, Kikuchi H, Yoshida T Journal of the Electrochemical Society, 150(7), G371, 2003 |
| 4 |
Direct synthesis of ethyl acetate from ethanol over Cu-Zn-Zr-Al-O catalyst Inui K, Kurabayashi T, Sato S Applied Catalysis A: General, 237(1-2), 53, 2002 |
| 5 |
Direct synthesis of ethyl acetate from ethanol carried out under pressure Inui K, Kurabayashi T, Sato S Journal of Catalysis, 212(2), 207, 2002 |
| 6 |
Self-limiting growth of GaAs with doping by molecular layer epitaxy using triethyl-gallium and AsH3 Nishizawa J, Kurabayashi T, Plotka P, Kikuchi H, Hamano T Journal of Crystal Growth, 244(3-4), 236, 2002 |
| 7 |
Doping technology for silicon thin films grown by temperature-modulation molecular layer epitaxy Nishizawa J, Kurabayashi T, Oizumi T, Murai A, Yoshida T Journal of the Electrochemical Society, 149(7), G399, 2002 |
| 8 |
Surface morphology investigation of Si thin film grown by temperature modulation Si molecular-layer epitaxy Nishizawa J, Murai A, Oizumi T, Kurabayashi T, Kanamoto K, Yoshida T Journal of Crystal Growth, 226(1), 39, 2001 |
| 9 |
Doping method for GaAs molecular-layer epitaxy by adsorption control of impurity precursor Kurabayashi T, Kikuchi H, Hamano T, Nishizawa J Journal of Crystal Growth, 229(1), 147, 2001 |
| 10 |
Self-limiting growth of GaAs molecular layer epitaxy using triethyl-gallium (TEG) and AsH3 Kurabayashi T, Kono K, Kikuchi H, Nishizawa J, Esashi M Journal of Crystal Growth, 229(1), 152, 2001 |