Self-limiting growth of GaAs with doping by molecular layer epitaxy has been studied using the intermittent supply of triethyl-gallium. (TEG), AsH3, and a dopant precursor, Te(CH3)(2) (diethyl-tellurium: DETe) or Se(CH3)(2) (diethylselenium: DESe) for n-type growth on GaAs(001). The self-limiting monolayer growth is applicable at the temperature of 265degreesC; however, the growth rate per cycle of doping decreased with increasing DETe pressure and saturated at about 0.4 monolayer with a saturation of the carrier concentration at 1.1-1.4 x 10(19) cm(-3). The carrier concentration was strongly influenced by the surface-terminating species, and the growth rate reduction in the TEG-AsH3 system is due to the electrical characteristics of the growing surface, namely, the exchange reaction of TEG and AsH3 shifted to a higher temperature. (C) 2002 Elsevier Science B.V. All rights reserved.