| 1 |
Physics-based compact model for ultra-scaled FinFETs
Yesayan A, Pregaldiny F, Chevillon N, Lallement C, Sallese JM
Solid-State Electronics, 62(1), 165, 2011 |
| 2 |
Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects
Diagne B, Pregaldiny F, Lallement C, Sallese JM, Krummenacher F
Solid-State Electronics, 52(1), 99, 2008 |
| 3 |
A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism
Sallese JM, Krurnmenacher F, Pregaldiny F, Lallement C, Roy A, Enz C
Solid-State Electronics, 49(3), 485, 2005 |
| 4 |
An advanced explicit surface potential model physically accounting for the quantization effects in deep-submicron MOSFETs
Pregaldiny F, Lallement C, van Langevelde R, Mathiot D
Solid-State Electronics, 48(3), 427, 2004 |
| 5 |
Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model
Pregaldiny F, Lallement C, Mathiot D
Solid-State Electronics, 48(5), 781, 2004 |
| 6 |
A simple efficient model of parasitic capacitances of deep-submicron LDD MOSFETs
Pregaldiny F, Lallement C, Mathiot D
Solid-State Electronics, 46(12), 2191, 2002 |
| 7 |
Improved analytical modeling of polysilicon depletion in MOSFETs for circuit simulation
Sallese JM, Bucher M, Lallement C
Solid-State Electronics, 44(6), 905, 2000 |
