검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Analysis of selectively grown epitaxial Si1-xGex by spectroscopic ellipsometry and comparison with other established techniques Loo R, Caymax M, Libezny M, Blavier G, Brijs B, Geenen L, Vandervorst W Journal of the Electrochemical Society, 147(2), 751, 2000 |
| 2 |
Low-Temperature Selective Growth of Epitaxial Si and Si1-xGex Layers from SiH4 and GeH4 in an Ultrahigh-Vacuum, Very-Low Pressure Chemical-Vapor-Deposition Reactor - Kinetics and Possibilities Caymax M, Poortmans J, Vanammel A, Libezny M, Nijs J, Mertens R Thin Solid Films, 241(1-2), 324, 1994 |
| 3 |
On the Relation Between Low-Temperature Epitaxial-Growth Conditions and the Surface-Morphology of Epitaxial Si and Si1-xGex Layers, Grown in an Ultrahigh-Vacuum, Very-Low Pressure Chemical-Vapor-Deposition Reactor Caymax M, Poortmans J, Vanammel A, Vanhellemont J, Libezny M, Nijs J, Mertens R Thin Solid Films, 241(1-2), 335, 1994 |