| 1 |
Barrier height adjustment of Schottky barrier diodes using a double-metal structure
Liou BW
Thin Solid Films, 545, 509, 2013 |
| 2 |
Design and fabrication of InxGa(1-x)N/GaN solar cells with a multiple-quantum-well structure on SiCN/Si(111) substrates
Liou BW
Thin Solid Films, 520(3), 1084, 2011 |
| 3 |
Fabrication of high breakdown voltage silicon Schottky barrier diodes using various edge termination structures
Liou BW
Thin Solid Films, 517(24), 6558, 2009 |
| 4 |
The use of transparent indium-zinc oxide/(oxidized-Ni/Au) ohmic contact to GaN-based light-emitting diodes for light output improvement
Uang KM, Wang SJ, Chen SL, Chen TM, Liou BW
Thin Solid Films, 515(4), 2501, 2006 |
| 5 |
Design and fabrication of high breakdown voltage 4H-SiC Schottky barrier diodes with floating metal ring edge terminations
Chang SC, Wang SJ, Uang KM, Liou BW
Solid-State Electronics, 49(3), 437, 2005 |
| 6 |
Investigation of Au/Ti/Al ohmic contact to N-type 4H-SiC
Chang SC, Wang SJ, Uang KM, Liou BW
Solid-State Electronics, 49(12), 1937, 2005 |
| 7 |
Micro-structures of BF2+- and As+-implanted polycrystalline silicon thin films of various thicknesses and heat treatments
Liou BW, Shu CC, Shui JW
Thin Solid Films, 473(2), 321, 2005 |
| 8 |
Characteristics of high breakdown voltage Schottky barrier diodes using p(+)-polycrystalline-silicon diffused-guard-ring
Liou BW, Lee CL
Solid-State Electronics, 44(4), 631, 2000 |
| 9 |
Plasma effects of fluorine implantation on As+-doped polycrystalline silicon thin films of various thicknesses
Liou BW, Lee CL
Thin Solid Films, 379(1-2), 213, 2000 |
