검색결과 : 28건
| No. | Article |
|---|---|
| 1 |
Indium incorporation into InGaN: The role of the adlayer Rossow U, Horenburg P, Ketzer F, Bremers H, Hangleiter A Journal of Crystal Growth, 464, 112, 2017 |
| 2 |
MOVPE growth of (GaIn)As/Ga(AsSb)/(GaIn)As type-II heterostructures on GaAs substrate for near infrared laser applications Fuchs C, Beyer A, Volz K, Stolz W Journal of Crystal Growth, 464, 201, 2017 |
| 3 |
Role of H-2 supply for Sn incorporations in MOCVD Ge1-xSnx epitaxial growth Suda K, Sawamoto N, Machida H, Ishikawa M, Sudoh H, Ohshita Y, Hirosawa I, Ogura A Journal of Crystal Growth, 468, 605, 2017 |
| 4 |
Photoluminescence and electrical properties of P-doped ZnTe layers grown by low pressure MOVPE Nishio M, Saito K, Nakatsuru Y, Shono T, Matsuo Y, Tomota A, Tanaka T, Guo QX Journal of Crystal Growth, 468, 666, 2017 |
| 5 |
Growth of ZnMgSeTe nearly lattice-matched to ZnTe and p-type doping by low-pressure MOVPE Saito K, Nishio M, Nakatsuru Y, Shono T, Matsuo Y, Tomota A, Tanaka T, Guo QX Journal of Crystal Growth, 468, 671, 2017 |
| 6 |
Hot-wall low pressure chemical vapor deposition growth and characterization of AlN thin films Heinselman KN, Brown RJ, Shealy JR Journal of Crystal Growth, 475, 286, 2017 |
| 7 |
Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells Czernecki R, Grzanka E, Smalc-Koziorowska J, Grzanka S, Schiavon D, Targowski G, Plesiewicz J, Prystawko P, Suski T, Perlin P, Leszczynski M Journal of Crystal Growth, 414, 38, 2015 |
| 8 |
Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells Rossow U, Hoffmann L, Bremers H, Buss ER, Ketzer F, Langer T, Hangleiter A, Mehrtens T, Schowalter M, Rosenauer A Journal of Crystal Growth, 414, 49, 2015 |
| 9 |
Growth and testing of vertical external cavity surface emitting lasers (VECSELs) for intracavity cooling of Yb:YLF Cederberg JG, Albrecht AR, Ghasemkhani M, Melgaard SD, Sheik-Bahae M Journal of Crystal Growth, 393, 28, 2014 |
| 10 |
Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region Rossow U, Kruse A, Jonen H, Hoffmann L, Ketzer F, Langer T, Buss R, Bremers H, Hangleiter A, Mehrtens T, Schowalter M, Rosenauer A Journal of Crystal Growth, 370, 105, 2013 |