검색결과 : 121건
| No. | Article |
|---|---|
| 1 |
Interfacial influence on electrical injection and transport characterization of CoFeB vertical bar MgO vertical bar GaAs-InGaAs quantum wells hetero-structure Tian Y, Zhang C, Xiao C, Wang R, Xu L, Devaux X, Renucci P, Xu B, Liang S, Yang C, Lu Y Applied Surface Science, 473, 230, 2019 |
| 2 |
Ultra-high photoresponse with superiorly sensitive metal-insulator-semiconductor (MIS) structured diodes for UV photodetector application Marnadu R, Chandrasekaran J, Maruthamuthu S, Balasubramani V, Vivek P, Suresh R Applied Surface Science, 480, 308, 2019 |
| 3 |
Characterization and optimization of MIS-HEMTs device of high similar to k dielectric material on quaternary barrier of Al0.42In0.03Ga0.55N/UID-AIN/GaN/GaN heterostructure for high power switching application Tarauni YU, Thiruvadigal DJ, Joseph HB Applied Surface Science, 488, 427, 2019 |
| 4 |
Al2O3 formed by post plasma oxidation of Al as a Gate dielectric for AlGaN/GaN MIS-HEMTs Takhar K, Upadhyay BB, Yadav YK, Ganguly S, Saha D Applied Surface Science, 481, 219, 2019 |
| 5 |
Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD Khosa RY, Chen JT, Palsson K, Karhu R, Hassan J, Rorsman N, Sveinbjornsson EO Solid-State Electronics, 153, 52, 2019 |
| 6 |
Carbon nanotube Schottky type photodetectors for UV applications Filatzikioti A, Glezos N, Kantarelou V, Kyriakis A, Pilatos G, Romanos G, Speliotis T, Stathopoulou DJ Solid-State Electronics, 151, 27, 2019 |
| 7 |
Resistive random-access memory with an a-Si/SiNx double-layer Kwon HT, Lee WJ, Choi HS, Wee D, Park YJ, Kim B, Kim MH, Kim S, Park BG, Kim Y Solid-State Electronics, 158, 64, 2019 |
| 8 |
Proton irradiation damage in cold worked Nb-stabilized 20Cr-25Ni stainless steel Alshater AF, Engelberg DL, Donohoe CJ, Lyon SB, Sherry AH Applied Surface Science, 454, 130, 2018 |
| 9 |
Silicon based MIS photoanode for water oxidation: A comparison of RuO2 and Ni Schottky contacts Mikolasek M, Frohlich K, Husekova K, Racko J, Rehacek V, Chymo F, Tapajna M, Harmatha L Applied Surface Science, 461, 48, 2018 |
| 10 |
Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p(+)-Si memory device Kim TH, Kim S, Kim H, Kim MH, Bang S, Cho S, Park BG Solid-State Electronics, 140, 51, 2018 |