검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Terahertz imaging using strained-Si MODFETs as sensors Meziani YM, Garcia-Garcia E, Velazquez-Perez JE, Coquillat D, Dyakonova N, Knap W, Grigelionis I, Fobelets K Solid-State Electronics, 83, 113, 2013 |
| 2 |
1/f Noise and trap density in n-channel strained-Si/SiGe modulation doped field effect transistors Fobelets K, Rumyantsev SL, Hackbarth T, Shur MS Solid-State Electronics, 53(6), 626, 2009 |
| 3 |
Low-frequency noise in buried-channel SiGe n-MODFETs Madan A, Cressler JD, Koester SJ Solid-State Electronics, 53(8), 901, 2009 |
| 4 |
Polarization dependent analysis of AlGaN/GaN HEMT for high power applications Gangwani P, Pandey S, HaIdar S, Gupta M, Gupta RS Solid-State Electronics, 51(1), 130, 2007 |
| 5 |
Anomalous effects of temperature and UV illumination on the operation of AlGaN/GaN MODFET Valizadeh P, Alekseev E, Pavlidis D, Yun F, Morkoc H Solid-State Electronics, 50(2), 282, 2006 |
| 6 |
Low frequency noise of AlGaN/GaN MODFETs: A comparative study of surface, barrier and heterointerface effects Valizadeh P, Pavlidis D, Shiojima K, Makimura T, Shigekawa N Solid-State Electronics, 49(8), 1352, 2005 |
| 7 |
Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices Isella G, Chrastina D, Rossner B, Hackbarth T, Herzog H, Konig U, von Kanel H Solid-State Electronics, 48(8), 1317, 2004 |
| 8 |
Large-signal modelling including low-frequency dispersion of n-channel SiGe MODFETs and MMIC applications Kallfass I, Brazil TJ, OhAnnaidh B, Abele P, Hackbarth T, Zeuner M, Konig U, Schumacher H Solid-State Electronics, 48(8), 1433, 2004 |
| 9 |
High quality SiGe electronic material grown by low energy plasma enhanced chemical vapour deposition Chrastina D, Isella G, Rossner B, Bollani M, Muller E, Hackbarth T, von Kanel H Thin Solid Films, 459(1-2), 37, 2004 |
| 10 |
High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET Aniel F, Enciso-Aguilar M, Giguerre L, Crozat P, Adde R, Mack T, Seiler U, Hackbarth T, Herzog HJ, Konig U, Raynor B Solid-State Electronics, 47(2), 283, 2003 |