검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Micromechanical testing of MEMS materials Buchheit TE, Glass SJ, Sullivan JR, Mani SS, Lavan DA, Friedmann TA, Janek R Journal of Materials Science, 38(20), 4081, 2003 |
| 2 |
Thermal conductivity measurement in lead bromide Singh NB, Coriell SR, Duval WMB, Mani SS, Green K, Glicksman ME Journal of Crystal Growth, 225(2-4), 512, 2001 |
| 3 |
Hall mobility of the electron inversion layer in 6H-SiC MOSFETs Saks NS, Mani SS, Agarwal AK, Hegde VS Materials Science Forum, 338-3, 737, 2000 |
| 4 |
Interface trap profiles near the band edges in 6H-SiC MOSFETs Saks NS, Mani SS, Agarwal AK Materials Science Forum, 338-3, 1113, 2000 |
| 5 |
Investigation of lateral RESURF, 6H-SiC MOSFETs Agarwal AK, Saks NS, Mani SS, Hegde VS, Sanger PA Materials Science Forum, 338-3, 1307, 2000 |
| 6 |
4H-SiC p-n diodes and gate turnoff thyristors for high-power, high-temperature applications Agarwal AK, Seshadri S, MacMillan M, Mani SS, Casady J, Sanger P, Shah P Solid-State Electronics, 44(2), 303, 2000 |
| 7 |
Surface roughness of reactive ion etched 4H-SiC in SF6/O-2 and CHF3/H-2/O-2 plasmas Casady JB, Mani SS, Siergiej RR, Urban W, Balakrishna V, Sanger PA, Brandt CD Journal of the Electrochemical Society, 145(4), L58, 1998 |