검색결과 : 22건
| No. | Article |
|---|---|
| 1 |
MBE-grown high kappa gate dielectrics of HfO2 and (Hf-Al)O-2 for Si and III-V semiconductors nano-electronics Lee WC, Lee YJ, Wu YD, Chang P, Huang YL, Hsu YL, Mannaerts JP, Lo RL, Chen FR, Maikap S, Lee LS, Hsieh WY, Tsai MJ, Lin SY, Gustffson T, Hong M, Kwo J Journal of Crystal Growth, 278(1-4), 619, 2005 |
| 2 |
Depth-profile study of the electronic structures at Ga2O3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy Lay TS, Liao YY, Hung WH, Hong M, Kwo J, Mannaerts JP Journal of Crystal Growth, 278(1-4), 624, 2005 |
| 3 |
Thin single-crystal SC2O3 films epitaxially grown on Si (111) -structure and electrical properties Chen CP, Hong M, Kwo J, Cheng HM, Huang YL, Lin SY, Chi J, Lee HY, Hsieh YF, Mannaerts JP Journal of Crystal Growth, 278(1-4), 638, 2005 |
| 4 |
Advances in high kappa gate dielectrics for Si and III-V semiconductors Kwo J, Hong M, Busch B, Muller DA, Chabal YJ, Kortan AR, Mannaerts JP, Yang B, Ye P, Gossmann H, Sergent AM, Ng KK, Bude J, Schulte WH, Garfunkel E, Gustafsson T Journal of Crystal Growth, 251(1-4), 645, 2003 |
| 5 |
Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric Yang B, Ye PD, Kwo J, Frei MR, Gossmann HJL, Mannaerts JP, Sergent M, Hong M, Bude KNJ Journal of Crystal Growth, 251(1-4), 837, 2003 |
| 6 |
Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor Lay TS, Liao YY, Liu WD, Lai YH, Hung WH, Kwo J, Hong M, Mannaerts JP Solid-State Electronics, 47(6), 1021, 2003 |
| 7 |
Single-crystal GaN/Gd2O3/GaN heterostructure Hong M, Kwo J, Chu SNG, Mannaerts JP, Kortan AR, Ng HM, Cho AY, Anselm KA, Lee CM, Chyi JI Journal of Vacuum Science & Technology B, 20(3), 1274, 2002 |
| 8 |
New phase formation of Gd2O3 films on GaAs(100) Kortan AR, Hong M, Kwo J, Mannaerts JP, Krajewski JJ, Kopylov N, Steiner C, Bolliger B, Erbudak M Journal of Vacuum Science & Technology B, 19(4), 1434, 2001 |
| 9 |
Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy Lay TS, Huang KH, Hung WH, Hong M, Kwo J, Mannaerts JP Solid-State Electronics, 45(3), 423, 2001 |
| 10 |
Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces Lay TS, Hong M, Kwo J, Mannaerts JP, Hung WH, Huang DJ Solid-State Electronics, 45(9), 1679, 2001 |