검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Increased nitrogen doping of thin lateral SiC cantilevers Trunek AJ, Neudeck PG, Matocha K, Dunne G Journal of Crystal Growth, 310(7-9), 1794, 2008 |
| 2 |
Challenges in SiC power MOSFET design Matocha K Solid-State Electronics, 52(10), 1631, 2008 |
| 3 |
Dual-SiC photodiode devices for simultaneous two-band detection Sandvik P, Brown D, Fedison J, Matocha K, Kretchmer J Journal of the Electrochemical Society, 152(3), G199, 2005 |
| 4 |
Characterization of SIC passivation using MOS capacitor ultraviolet-induced hysteresis Matocha K, Tucker J, Kaminsky E Materials Science Forum, 483, 589, 2005 |
| 5 |
Self-aligned N plus polysilicon-gate GaN MOSFETs Matocha K, Chow TP, Gutmann RJ Materials Science Forum, 457-460, 1633, 2004 |
| 6 |
Gallium nitride power device design tradeoffs Matocha K, Chow TP, Gutmann RJ Materials Science Forum, 389-3, 1531, 2002 |
| 7 |
Gallium nitride metal-insulator-semiconductor capacitors using low-pressure chemical vapor deposited oxides Matocha K, Chow TP, Gutmann RJ Materials Science Forum, 389-3, 1535, 2002 |
| 8 |
SiC and GaN bipolar power devices Chow TP, Khemka V, Fedison J, Ramungul N, Matocha K, Tang Y, Gutmann RJ Solid-State Electronics, 44(2), 277, 2000 |