검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Comprehensive study of S/D engineering for 32 nm node CMOS in direct silicon bonded (DSB) technology Yasutake N, Nomachi A, Itokawa H, Morooka T, Zhang L, Fukushima T, Harakawa H, Mizushima I, Azuma A, Toyosihma Y Solid-State Electronics, 53(7), 694, 2009 |
| 2 |
A study on aggressive proximity of embedded SiGe with comprehensive source drain extension engineering for 32 nm node high-performance pMOSFET technology Okamoto H, Yasutake N, Kusunoki N, Adachi K, Itokawa H, Miyano K, Ishida T, Hokazono A, Kawanaka S, Mizushima I, Azuma A, Toyoshima Y Solid-State Electronics, 53(7), 712, 2009 |
| 3 |
Source/drain engineering for MOSFETs with embedded-Si : C technology Itokawa H, Yasutake N, Kusunoki N, Okamoto S, Aoki N, Mizushima I Applied Surface Science, 254(19), 6135, 2008 |
| 4 |
A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32 nm node and beyond Yasutake N, Azuma A, Ishida T, Ohuchi K, Aoki N, Kusunoki N, Mori S, Mizushima I, Morooka T, Kawanaka S, Toyoshima Y Solid-State Electronics, 51(11-12), 1437, 2007 |
| 5 |
Residual stress in Ni-W electrodeposits Mizushima I, Tang PT, Hansen HN, Somers MAJ Electrochimica Acta, 51(27), 6128, 2006 |
| 6 |
Development of a new electroplating process for Ni-W alloy deposits Mizushima I, Tang PT, Hansen HN, Somers MAJ Electrochimica Acta, 51(5), 888, 2005 |
| 7 |
Oh-Related Capacitance-Voltage Recovery Effect in MOS Capacitors Passivated by ZnO-B2O3-SiO2-P2O5 Glasses .8. The Effects of SrF2 and BeO Contents Kobayashi K, Mizushima I Journal of Materials Science Letters, 15(4), 357, 1996 |
| 8 |
Microstructure of Electrodeposited Cu-Ni Binary Alloy-Films Mizushima I, Chikazawa M, Watanabe T Journal of the Electrochemical Society, 143(6), 1978, 1996 |
| 9 |
Oh-Related Capacitance-Voltage Recovery Effect in MOS Capacitors Passivated by PbO-B2O3-SiO2-Al2O3 Glasses .3. The Effects of PbO Content Kobayashi K, Mizushima I Journal of Materials Science Letters, 13(24), 1764, 1994 |